Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

K5A3X40YTC Datasheet(PDF) 2 Page - Samsung semiconductor

Part # K5A3X40YTC
Description  Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
Download  45 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K5A3X40YTC Datasheet(HTML) 2 Page - Samsung semiconductor

  K5A3X40YTC Datasheet HTML 1Page - Samsung semiconductor K5A3X40YTC Datasheet HTML 2Page - Samsung semiconductor K5A3X40YTC Datasheet HTML 3Page - Samsung semiconductor K5A3X40YTC Datasheet HTML 4Page - Samsung semiconductor K5A3X40YTC Datasheet HTML 5Page - Samsung semiconductor K5A3X40YTC Datasheet HTML 6Page - Samsung semiconductor K5A3X40YTC Datasheet HTML 7Page - Samsung semiconductor K5A3X40YTC Datasheet HTML 8Page - Samsung semiconductor K5A3X40YTC Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 45 page
background image
MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 2 -
Preliminary
Multi-Chip Package MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
The K5A3x40YT(B)C featuring single 3.0V power supply is a
Multi Chip Package Memory which combines 32Mbit Dual Bank
Flash and 4Mbit fCMOS SRAM.
The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit
and 4Mbit SRAM is organized as 512K x8 or 256K x16 bit. The
memory architecture of flash memory is designed to divide its
memory arrays into 71 blocks and this provides highly flexible
erase and program capability. This device is capable of reading
data from one bank while programming or erasing in the other
bank with dual bank organization.
The Flash memory performs a program operation in units of 8 bits
(Byte) or 16 bits (Word) and erases in units of a block. Single or
multiple blocks can be erased. The block erase operation is com-
pleted for typically 0.7sec.
The 4Mbit SRAM supports low data retention voltage for battery
backup operation with low data retention current.
The K5A3x40YT(B)C is suitable for the memory of mobile com-
munication system to reduce mount area. This device is available
in 69-ball TBGA Type package.
FEATURES
• Power Supply voltage : 2.7V to 3.3V
• Organization
- Flash : 4,194,304 x 8 / 2,097,152 x 16 bit
- SRAM : 524,288 x 8 / 262,144 x 16 bit
• Access Time (@2.7V)
- Flash : 70 ns, SRAM : 55 ns
• Power Consumption (typical value)
- Flash Read Current : 14 mA (@5MHz)
Program/Erase Current : 15 mA
Standby mode/Autosleep mode : 5
µA
Read while Program or Read while Erase : 25 mA
- SRAM Operating Current : 20 mA
Standby Current : 0.5
µA
• Secode(Security Code) Block : Extra 64KB Block (Flash)
• Block Group Protection / Unprotection (Flash)
• Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb
• Flash Endurance : 100,000 Program/Erase Cycles Minimum
• SRAM Data Retention : 1.5 V (min.)
• Industrial Temperature : -40°C ~ 85°C
• Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch
1.2mm(max.) Thickness
GENERAL DESCRIPTION
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
BALL CONFIGURATION
BALL DESCRIPTION
Ball Name
Description
A0 to A17
Address Input Balls (Common)
A-1, A18 to A20
Address Input Balls (Flash Memory)
DQ0 to DQ15
Data Input/Output Balls (Common)
RESET
Hardware Reset (Flash Memory)
WP/ACC
Write Protection / Acceleration Program
(Flash Memory)
VccS
Power Supply (SRAM)
VccF
Power Supply (Flash Memory)
Vss
Ground (Common)
UB
Upper Byte Enable (SRAM)
LB
Lower Byte Enable (SRAM)
BYTES
BYTES Control (SRAM)
BYTEF
BYTEF Control (Flash Memory)
SA
Address Inputs (SRAM)
CEF
Chip Enable (Flash Memory)
CS1S
Chip Enable (SRAM Low Active)
CS2S
Chip Enable (SRAM High Active)
WE
Write Enable (Common)
OE
Output Enable (Common)
RY/BY
Ready/Busy (Flash memory)
N.C
No Connection
Top View (Ball Down)
A7
UB
A8
A3
A6
RESET
LB
CS2S
A19
A2
A5
A18
RY/BY
A20
A9
A4
DQ6
CEF
OE
DQ9
DQ3
DQ4
DQ13
1
2
3
4
5
6
A
B
C
D
E
F
WP/
WE
Vss
A10
DQ1
A0
A1
A17
A11
A12
A15
A13
N.C
A14
SA
A16
DQ15
BYTEF
7
8
N.C
DQ8
DQ2
DQ11
DQ5
H
DQ14
CS1S
DQ0
DQ10
VccF
VccS
DQ12
G
DQ7
Vss
BYTES
/A-1
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
9
10
K
J
69 Ball TBGA , 0.8mm Pitch
ACC


Similar Part No. - K5A3X40YTC

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K5A3X80YTC SAMSUNG-K5A3X80YTC Datasheet
625Kb / 45P
   MCP MEMORY
More results

Similar Description - K5A3X40YTC

ManufacturerPart #DatasheetDescription
logo
Macronix International
MX29F400T MCNIX-MX29F400T Datasheet
710Kb / 44P
   4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
logo
Samsung semiconductor
K5T6432YT SAMSUNG-K5T6432YT Datasheet
606Kb / 40P
   Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory / 32M Bit 2Mx16 UtRAM
logo
Macronix International
MX29F004T MCNIX-MX29F004T Datasheet
587Kb / 39P
   4M-BIT [512KX8] CMOS FLASH MEMORY
MX29F400CT MCNIX-MX29F400CT Datasheet
442Kb / 42P
   4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
MX29F4000 MCNIX-MX29F4000 Datasheet
247Kb / 36P
   4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040 MCNIX-MX29F040 Datasheet
592Kb / 40P
   4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
logo
Samsung semiconductor
K8S6415ETB SAMSUNG-K8S6415ETB Datasheet
905Kb / 39P
   64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
logo
Sharp Corporation
LRS1337 SHARP-LRS1337 Datasheet
967Kb / 30P
   Stacked Chip 32M Flash Memory and 4M SRAM
logo
Samsung semiconductor
K8D6X16UTM SAMSUNG-K8D6X16UTM Datasheet
639Kb / 48P
   64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6X16UTM SAMSUNG-K8D6X16UTM_06 Datasheet
1Mb / 48P
   64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com