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IRF7494 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7494
Description  HEXFET Power MOSFET
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF7494
2
www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
150
–––
–––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.15
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
35
44
m
VGS(th)
Gate Threshold Voltage
2.5
–––
4.5
V
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
µA
–––
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
gfs
Forward Transconductance
12
–––
–––
S
Qg
Total Gate Charge
–––
36
54
Qgs
Gate-to-Source Charge
–––
7.5
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
13
–––
td(on)
Turn-On Delay Time
–––
15
–––
tr
Rise Time
–––13–––
td(off)
Turn-Off Delay Time
–––
36
–––
ns
tf
Fall Time
–––14–––
Ciss
Input Capacitance
–––
1750
–––
Coss
Output Capacitance
–––
220
–––
Crss
Reverse Transfer Capacitance
–––
100
–––
pF
Coss
Output Capacitance
–––
870
–––
Coss
Output Capacitance
–––
120
–––
Coss eff.
Effective Output Capacitance
–––
170
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
Ù
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
2.7
(Body Diode)
A
ISM
Pulsed Source Current
–––
–––
42
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.3
V
trr
Reverse Recovery Time
–––
55
–––
ns
Qrr
Reverse Recovery Charge
–––
140
–––
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 20V
VGS = -20V
Max.
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 120V
g
VGS = 10V
f
VDD = 100V
ID = 3.1A
RG = 6.5
TJ = 25°C, IS = 3.1A, VGS = 0V f
TJ = 25°C, IF = 3.1A, VDD = 25V
di/dt = 100A/µs
f
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 3.1A
f
VDS = VGS, ID = 250µA
VDS = 120V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
VGS = 10V
f
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
370
3.1
Typ.
–––
–––
Conditions
VDS = 50V, ID = 5.2A
ID = 3.1A
VDS = 75V
75V




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