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CY7C1382BV25-166AC Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY7C1382BV25-166AC
Description  512K x 36 / 1 Mb x 18 Pipelined SRAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1382BV25-166AC Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY7C1380BV25
CY7C1382BV25
PRELIMINARY
8
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ plac-
es the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered
valid nor is the completion of the operation guaranteed. The
device must be deselected prior to entering the “sleep” mode.
CEs, ADSP, and ADSC must remain inactive for the duration
of tZZREC after the ZZ input returns LOW.
Interleaved Burst Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
A[1:0]]
A[1:0]
A[1:0]
A[1:0]
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Sequence
First
Address
Second
Address
Third
Address
Fourth
Address
A[1:0]
A[1:0]
A[1:0]
A[1:0]
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max.
Unit
IDDZZ
Snooze mode
standby current
ZZ
> V
DD − 0.2V
15
mA
tZZS
Device operation to
ZZ
ZZ
> V
DD − 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ
< 0.2V
2tCYC
ns


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