STK534U342C-E

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2

Parameter

Symbol

Conditions

Test

circuit

MIN

TYP

MAX

Unit

Power output section

Collector-emitter cut-off current

ICE

VCE = 600 V

Fig.1

-

-

100

μA

Bootstrap diode reverse current

IR(BD)

VR(BD) = 600 V

-

-

100

μA

Collector to emitter saturation voltage

VCE(SAT)

Io = 5 A, Tj = 25

C

Fig.2

-

1.6

2.4

V

Io = 3 A, Tj = 100

C

1.4

-

Diode forward voltage

VF

Io =

5 A, Tj = 25C

Fig.3

-

1.2

1.8

V

Io =

3 A, Tj = 100C

1.0

-

Junction to case thermal resistance

θj-c(T)

IGBT

-

-

-

4.5

C /W

θj-c(D)

FWD

-

-

6

Control (Pre-driver) section

Pre-driver power dissipation

ID

VD1,2,3 = 15 V

Fig.4

-

0.08

0.4

mA

VD4 = 15 V

-

1.6

4

High level Input voltage

Vin H

HIN1,HIN2,HIN3,

LIN1,LIN2,LIN3 to VSS

-

2.5

-

-

V

Low level Input voltage

Vin L

-

-

-

0.8

V

Logic 1 input leakage current

VIN = +3.3 V

-

-

100

143

μA

Logic 0 input leakage current

VIN = 0 V

-

-

-

2

μA

FLTEN terminal sink current

IoSD

FAULT:ON / VFLTEN=0.1 V

-

-

2

-

mA

FLTEN clearance delay time

FLTCLR

From time fault condition

clear

-

1.0

2.0

3.0

ms

FLTEN Threshold

VEN+

VEN rising

-

-

-

2.5

V

VEN-

VEN falling

-

0.8

-

-

V

ITRIP threshold voltage

VITRIP

ITRIP(16) to VSS(29)

-

0.44

0.49

0.54

V

ITRIP to shutdown propagation delay

-

340

550

800

ns

ITRIP blanking time

-

250

350

-

ns

-

10.5

11.1

11.7

V

-

10.3

10.9

11.5

V

-

0.14

0.2

-

V

Reference voltage is “VSS” terminal voltage unless otherwise specified.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.