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INA213BIRSWR Datasheet(PDF) 6 Page - Texas Instruments

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Part # INA213BIRSWR
Description  Voltage Output, Low- or High-Side Measurement, Bidirectional
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

INA213BIRSWR Datasheet(HTML) 6 Page - Texas Instruments

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6
INA210, INA211, INA212, INA213, INA214, INA215
SBOS437I – MAY 2008 – REVISED SEPTEMBER 2016
www.ti.com
Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA215
Submit Documentation Feedback
Copyright © 2008–2016, Texas Instruments Incorporated
Pin Functions
PIN
I/O
DESCRIPTION
NAME
NO.
DCK
RSW
GND
2
9
Analog
Ground
IN–
5
4, 5
Analog
input
Connect to load side of shunt resistor.
IN+
4
2, 3
Analog
input
Connect to supply side of shunt resistor
NC
1, 7
Not internally connected. Leave floating or connect to ground.
OUT
6
10
Analog
output
Output voltage
REF
1
8
Analog
input
Reference voltage, 0 V to V+
V+
3
6
Analog
Power supply, 2.7 V to 26 V
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
VIN+ and VIN– are the voltages at the IN+ and IN– terminals, respectively.
(3)
Input voltage at any terminal may exceed the voltage shown if the current at that terminal is limited to 5 mA.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN
MAX
UNIT
Supply voltage, VS
26
V
Analog inputs, VIN+, VIN–
(2)
Differential (VIN+) – (VIN–)
–26
26
V
Common-mode(3)
GND – 0.3
26
V
REF input
GND – 0.3
(VS) + 0.3
V
Output(3)
GND – 0.3
(VS) + 0.3
V
Input current into any terminal(3)
5
mA
Operating temperature
–55
150
°C
Junction temperature
150
°C
Storage temperature, Tstg
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE
UNIT
INA21x, Version A
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±4000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000
INA21x, Version B
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1)
±3500
V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±1000


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