SQJ952EP datasheet(8/13 Pages) VISHAY

Part #	SQJ952EP

Description	Automotive Dual N-Channel 12 V (D-S) 175 °C MOSFETs

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Manufacturer	VISHAY [Vishay Siliconix]

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SQJ202EP

www.vishay.com

Vishay Siliconix

S15-2474-Rev. A, 19-Oct-15

8

Document Number: 62926

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-CHANNEL 2 TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

Source Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Drain Source Breakdown vs. Junction Temperature

Safe Operating Area

0.001

0.01

0.1

1

10

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V

SD - Source-to-Drain Voltage (V)

T

J = 25 °C

T

J = 150 °C

- 1.3

- 0.9

- 0.5

- 0.1

0.3

0.7

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Temperature (°C)

I

D = 250 μA

I

D = 5 mA

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 20 A

V

GS = 4.5 V

V

GS = 10 V

0.000

0.003

0.006

0.009

0.012

0.015

0

2

4

6

8

10

V

GS - Gate-to-Source Voltage (V)

T

J = 150 °C

T

J = 25 °C

12

13

14

15

16

17

- 50

- 25

0

25

50

75

100

125

150

175

T

J - Junction Temperature (°C)

I

D = 1 mA

0.1

1

10

100

1000

0.01

0.1

1

10

100

V

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

Limited by R

DS(on)*

1 ms

I

DM Limited

T

C = 25 °C

Single Pulse

BVDSS Limited

10 ms

100 ms, 1 s,

10 s, DC

I

D Limited

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