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TPS650860A0RSKT Datasheet(PDF) 8 Page - Texas Instruments |
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TPS650860A0RSKT Datasheet(HTML) 8 Page - Texas Instruments |
8 / 94 page TPS650860 SWCS128A – MARCH 2015 – REVISED DECEMBER 2015 www.ti.com 4 Specifications 4.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT ANALOG VSYS Input voltage from battery –0.3 28 V PVIN3, PVIN4, PVIN5, LDO5P0, DRV5V_1_6, DRV5V_2_A1, DRVL1, DRVL2, DRVL6 –0.3 7 V V5ANA –0.3 6 V PGNDSNS1, PGNDSNS2, PGNDSNS6, AGND, FBGND2 –0.3 0.3 V DRVH1, DRVH2, DRVH6, BOOT1, BOOT2, BOOT6 –0.3 34 V SW1, SW2, SW6 –2(2) 28 V LX3, LX4, LX5 –1(3) 7 V BOOTx to SWx Differential voltage –0.3 5.5 V VREF, LDO3P3, FBVOUT1, FBVOUT2, FBVOUT6, FB3, FB4, FB5, ILIM1, ILIM2, ILIM6, PVINVTT, –0.3 3.6 V VTT, VTTFB, PVINSWA1, SWA1, PVINSWB1_B2, SWB1, SWB2, LDOA1 PVINLDOA2_A3, LDOA2, LDOA3 –0.3 3.3 V DIGITAL IOs DATA, CLK, GPO1-GPO3 –0.3 3.6 V CTL1-CTL6, GPO4, IRQB –0.3 7 V Tstg Storage temperature –40 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Transient for less than 5 ns. (3) Transient for less than 20 ns. 4.2 ESD Ratings VALUE UNIT Human Body Model (HBM), ±1000 V per ANSI/ESDA/JEDEC JS001(1) Electrostatic discharge (ESD) VESD performance Charged Device Model (CDM), All pins ±250 V per JESD22-C101(2) (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 8 Specifications Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: TPS650860 |
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