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BLF1820-70 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BLF1820-70 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 2003 Feb 10 4 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-70 handbook, halfpage 0 PL (PEP) (W) 15 10 5 0 20 40 80 60 MLD526 Gp (dB) ηD (%) Gp ηD 60 20 40 0 Fig.2 Power gain and drain efficiency as a function of peak envelope load power; typical values. f1 = 2000 MHz; f2 = 2000.1 MHz; VDS =26V; IDQ = 500 mA; Th ≤ 25 °C. Fig.2 Power gain and drain efficiency as a function of peak envelope load power; typical values. handbook, halfpage 020 PL (PEP) (W) dim (dBc) 40 80 0 −20 −60 −80 −40 60 MLD527 d3 d5 d7 f1 = 2000 MHz; f2 = 2000.1 MHz; VDS =26V; IDQ = 500 mA; Th ≤ 25 °C. Fig.3 Intermodulation distortion as a function of peak envelope load power; typical values. handbook, halfpage 0 (1) (2) (3) PL (W) 15 10 5 0 20 40 80 60 MLD528 Gp (dB) ηD (%) 60 20 40 0 (3) (1) (2) Fig.4 Power gain and drain efficiency as a function of the peak envelope load power; typical values. f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; Th ≤ 25 °C. (1) IDQ = 400 mA. (2) IDQ = 500 mA. (3) IDQ = 600 mA. handbook, halfpage 0 (1) (2) (3) 20 PL (PEP) (W) d3 (dBc) 40 80 0 −20 −60 −80 −40 60 MLD529 Fig.5 Third order intermodulation distortion as a function of peak envelope load power; typical values. VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) IDQ = 400 mA. (2) IDQ = 500 mA. (3) IDQ = 600 mA. |
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