BLF1820-70 datasheet(4/12 Pages) PHILIPS

Part #	BLF1820-70

Description	UHF power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 12 page

2003 Feb 10

4

Philips Semiconductors

Product speciﬁcation

UHF power LDMOS transistor

BLF1820-70

handbook, halfpage

0

PL (PEP) (W)

15

10

5

0

20

40

80

60

MLD526

Gp

(dB)

ηD

(%)

Gp

ηD

60

20

40

0

Fig.2

Power gain and drain efficiency as a

function of peak envelope load power;

typical values.

f1 = 2000 MHz; f2 = 2000.1 MHz; VDS =26V;

IDQ = 500 mA; Th ≤ 25 °C.

Fig.2

Power gain and drain efficiency as a

function of peak envelope load power;

typical values.

handbook, halfpage

020

PL (PEP) (W)

dim

(dBc)

40

80

0

−20

−60

−80

−40

60

MLD527

d3

d5

d7

f1 = 2000 MHz; f2 = 2000.1 MHz; VDS =26V;

IDQ = 500 mA; Th ≤ 25 °C.

Fig.3

Intermodulation distortion as a function of

peak envelope load power; typical values.

handbook, halfpage

0

(1)

(2)

(3)

PL (W)

15

10

5

0

20

40

80

60

MLD528

Gp

(dB)

ηD

(%)

60

20

40

0

(3)

(1)

(2)

Fig.4

Power gain and drain efficiency as a

function of the peak envelope load power;

typical values.

f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; Th ≤ 25 °C.

(1) IDQ = 400 mA.

(2) IDQ = 500 mA.

(3) IDQ = 600 mA.

handbook, halfpage

0

(1)

(2)

(3)

20

PL (PEP) (W)

d3

(dBc)

40

80

0

−20

−60

−80

−40

60

MLD529

Fig.5

Third order intermodulation distortion as a

function of peak envelope load power;

typical values.

VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.

(1) IDQ = 400 mA.

(2) IDQ = 500 mA.

(3) IDQ = 600 mA.

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BLF1820-70 Datasheet(PDF) 4 Page - NXP Semiconductors

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