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BF1205C Datasheet(PDF) 6 Page - NXP Semiconductors |
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BF1205C Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 22 page 9397 750 13005 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 18 May 2004 6 of 22 Philips Semiconductors BF1205C Dual N-channel dual gate MOS-FET [1] For the MOS-FET not in use: VG1-S(b) = 0 V; VDS(b) =0V. [2] Measured in Figure 33 test circuit. 8.1.1 Graphs for amplifier a Xmod cross-modulation input level for k = 1%; fw = 50 MHz; funw =60MHz [2] at 0 dB AGC 90 - - dB µV at 10 dB AGC - 90 - dB µV at 20 dB AGC - 99 - dB µV at 40 dB AGC 100 105 - dB µV Table 8: Dynamic characteristics for amplifier a [1] …continued Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 19 mA. Symbol Parameter Conditions Min Typ Max Unit (1) VG2-S =4V. (2) VG2-S = 3.5 V. (3) VG2-S =3V. (4) VG2-S = 2.5 V. (5) VG2-S =2V. (6) VG2-S = 1.5 V. (7) VG2-S =1V. VDS(a) =5V; VG1-S(b) =VDS(b) =0V; Tj =25 °C. (1) VG1-S(a) = 1.8 V. (2) VG1-S(a) = 1.7 V. (3) VG1-S(a) = 1.6 V. (4) VG1-S(a) = 1.5 V. (5) VG1-S(a) = 1.4 V. (6) VG1-S(a) = 1.3 V. (7) VG1-S(a) = 1.2 V. (8) VG1-S(a) = 1.1 V. (9) VG1-S(a) =1V. VG2-S =4V; VG1-S(b) =VDS(b) =0V; Tj =25 °C. Fig 4. Transfer characteristics; typical values. Fig 5. Output characteristics; typical values. VG1-S (V) 02 1.6 0.8 1.2 0.4 001aaa554 10 20 30 ID (mA) 0 (1) (2) (3) (4) (5) (7) (6) 001aaa555 VDS (V) 06 4 2 16 8 24 32 ID (mA) 0 (2) (3) (4) (6) (7) (9) (8) (5) (1) |
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