© Semiconductor Components Industries, LLC, 2004

June, 2004 − Rev. 8

Publication Order Number:

BC856ALT1/D

1

BC856ALT1 Series

Preferred Devices

General Purpose

Transistors

PNP Silicon

Features

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC856

BC857

BC858, BC859

−65

−45

−30

V

Collector-Base Voltage

BC856

BC857

BC858, BC859

−80

−50

−30

V

Emitter−Base Voltage

−5.0

V

Collector Current − Continuous

−100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR− 5 Board,

Derate above 25

°C

225

1.8

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

556

°C/W

Total Device Dissipation Alumina

Derate above 25

°C

300

2.4

mW

mW/

°C

Thermal Resistance,

Junction−to−Ambient

417

°C/W

Junction and Storage Temperature

− 55 to

+150

°C

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.

SOT−23

CASE 318

STYLE 6

MARKING DIAGRAM

xx = Device Code

M = Date Code

1

2

3

12

3

xxM

Preferred devices are recommended choices for future use

and best overall value.

COLLECTOR

3

1

BASE

2

EMITTER

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION