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NCP391FCCADT2G Datasheet(PDF) 4 Page - ON Semiconductor

Part # NCP391FCCADT2G
Description  Positive Overvoltage Protection Controller
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP391FCCADT2G Datasheet(HTML) 4 Page - ON Semiconductor

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NCP391
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS − NCP391FCALT2G (Min/Max limits values (−40
°C < TA < +85°C) and Vin = +5.0 V. Typical
values are TA = +25°C, unless otherwise noted.)
Characteristic
Symbol
Conditions
Min
Typ
Max
Unit
Input Voltage Range
Vin
1.2
28
V
Undervoltage Lockout Threshold (Note 4)
NCP391FCAL
UVLO
Vin falls below UVLO threshold
from 5 V to 2.7 V
2.8
2.95
3.1
V
Undervoltage Lockout Hysteresis
UVLOhyst
Vin rises above UVLO + UVLOhyst
30
60
90
mV
Overvoltage Lockout Threshold (Note 4)
NCP391FCAL
OVLO
Vin rises above OVLO threshold
7.16
7.4
7.65
V
Overvoltage Lockout Hysteresis
NCP391FCAL
OVLOhyst
Vin falls below OVLO + OVLOhyst
50
100
150
mV
Vin versus Vout Resistance
RDS(on)
Vin = 5.0 V, EN = GND,
Load connected to Vout
120
200
m
W
Supply Quiescent Current
Idd
No load. EN = 5.0 V
70
150
mA
No load. EN = Gnd
90
170
mA
UVLO Supply Current
Idduvlo
VIN = 2.7 V
60
mA
MOSFET Leakage
Ivdss
VIN = 28 V
10
500
nA
FLAG Output Low Voltage
Volflag
1.2 V < VIN < UVLO
Sink 50
mA on/FLAG pin
20
400
mV
VIN > OVLO
Sink 1.0 mA on FLAG pin
400
mV
FLAG Leakage Current
FLAGleak
FLAG level = 5.0 V
1.0
nA
EN Voltage High
Vih
1.2
V
EN Voltage Low
Vol
0.4
V
EN Leakage Current
ENleak
EN = 5.0 V or GND
1.0
nA
Thermal Shutdown Temperature
tSD
150
°C
Thermal Shutdown Hysteresis
tSDhyst
15
°C
TIMINGS
Startup Delay
ton
From Vin > UVLO to Vout = 0.3 V
(See Figures 3 & 7)
6.0
10
14
ms
FLAG Going Up Delay
tstart
From Vout = 0.3 V to FLAG = 1.2 V
(See Figures 3 & 9)
6.0
10
14
ms
Output Turn Off Time
toff
From Vin > OVLO to Vout < = 0.3 V
(See Figures 4 & 8)
Vin increasing from 5.0 V to 8.0 V
at 3.0 V/
ms
Rload connected on Vout
1.5
5.0
ms
Alert Delay
tstop
From Vin > OVLO to FLAG < =
0.4 V (See Figures 4 & 10)
Vin increasing from 5.0 V to 8.0 V
at 3.0 V/
ms
Rload connected on Vout
1.0
ms
Disable Time
tdis
From EN > = 1.2 V to
Vout < 0.3 V
Rload = 5.0
W
(See Figures 5 & 12)
1.0
5.0
ms
NOTE:
Electrical parameters are guaranteed by correlation across the full range of temperature.
4. Additional UVLO and OVLO thresholds ranging from UVLO and from OVLO can be manufactured. Contact your ON Semiconductor
representative for availability.


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