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LA6581DM Datasheet(PDF) 2 Page - ON Semiconductor |
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LA6581DM Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page LA6581DM No.A2264-2/5 Recommended Operating Conditions at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Supply voltage VCC 2.2 to 16 V Common-phase input voltage range of Hall input VICM 0.3 to VCC-1.5 V Electrical Characteristics at Ta = 25 °C, VCC = 12.0V, unless especially specified. Parameter Symbol Conditions Ratings Unit min Typ Max Circuit Current ICC IN- = 5.8V, IN+ = 6.0V, RL = ∞ 14 19 mA OUT output low voltage VOL IO = 100mA 0.1 0.2 V OUT output high voltage VOH IO = 100mA 0.1 0.2 V Hall bias voltage VHB RH = 360 Ω +91Ω 1.85 1.95 2.05 V Hall amplifier gain Vg 52 55 58 dB Hall amplifier input current VINR -10 -2 +10 μA FG output low voltage VFG IFG = 3mA 0.2 0.3 V FG output leakage current IFGL VFG = 7V 30 μA Thermal protection circuit Th * Design guarantee 150 180 200 °C *: These values are design guarantee values, and are not tested. Truth Table IN- IN+ OUT1 OUT2 FG mode H L H L L During rotation L H L H Off - - Off Off - During overheat protection Pd-Ta 90 120 0 500 400 300 200 100 Pd max -- Ta 160 With specified board |
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