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MC33153DG Datasheet(PDF) 1 Page - ON Semiconductor

Part # MC33153DG
Description  Single IGBT Gate Driver
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC33153DG Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 8
1
Publication Order Number:
MC33153/D
MC33153
Single IGBT Gate Driver
The MC33153 is specifically designed as an IGBT driver for high
power applications that include ac induction motor control, brushless
dc motor control and uninterruptable power supplies. Although
designed for driving discrete and module IGBTs, this device offers a
cost effective solution for driving power MOSFETs and Bipolar
Transistors. Device protection features include the choice of
desaturation or overcurrent sensing and undervoltage detection. These
devices are available in dual−in−line and surface mount packages.
Features
High Current Output Stage: 1.0 A Source/2.0 A Sink
Protection Circuits for Both Conventional and Sense IGBTs
Programmable Fault Blanking Time
Protection against Overcurrent and Short Circuit
Undervoltage Lockout Optimized for IGBT’s
Negative Gate Drive Capability
Cost Effectively Drives Power MOSFETs and Bipolar Transistors
This is a Pb−Free and Halide−Free Device
Figure 1. Representative Block Diagram
This device contains 133 active transistors.
Short Circuit
Latch
Overcurrent
Latch
Fault
Output
S
Q
R
Current
Sense
Input
Kelvin
GND
Fault
Blanking/
Desaturation
Input
Drive
Output
Short Circuit
Comparator
Overcurrent
Comparator
Fault Blanking/
Desaturation
Comparator
Under
Voltage
Lockout
Input
VEE
VCC
VCC
VCC
VEE
VEE
VCC
VEE
VCC
VEE
VCC
VEE
VCC
S
Q
R
VCC
VCC
6
7
4
5
3
8
2
1
130 mV
65 mV
270
mA
6.5 V
Output
Stage
12 V/
11 V
100 k
PDIP−8
P SUFFIX
CASE 626
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
http://onsemi.com
SOIC−8
D SUFFIX
CASE 751
PIN CONNECTIONS
MC33153P
YYWWG
1
1
8
AWL
33153
ALYW
G
1
8
1
A
= Assembly Location
L, WL
= Wafer Lot
Y, YY
= Year
W, WW = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
18
7
6
5
2
3
4
(Top View)
Current Sense
Input
Kelvin GND
VEE
Input
Fault Blanking/
Desaturation Input
Drive Output
Fault Output
VCC


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