DMN1045UFR4 datasheet(3/6 Pages) DIODES

Part #	DMN1045UFR4

Description	N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

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3 / 6 page

DMN1045UFR4

Document number: DS37303 Rev. 2 - 2

3 of 6

www.diodes.com

October 2014

DMN1045UFR4

0.0

1.0

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5.0

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V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristic

V

GS = 1.8V

V

GS = 2.5V

V

GS = 3.0V

V

GS = 4.0V

V

GS = 8.0V

V

GS = 3.5V

V

GS = 4.5V

V

GS = 1.5V

V

GS = 1.2V

0

1

2

3

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5

0.4

0.6

0.8

1

1.2

1.4

1.6

V

GS, GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristic

V

DS = 5V

-55oC

25oC

85oC

125oC

150oC

0.02

0.024

0.028

0.032

0.036

0.04

0.044

0.048

0.052

0.056

0.06

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I

D, DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs Drain Current

and Gate Voltage

0.01

0.03

0.05

0.07

0.09

0.11

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V

GS, GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristic

0.6

0.8

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1.2

1.4

1.6

1.8

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (°

C)

Figure 6 On-Resistance Variation with Temperature

V

GS=2.5V, ID=3.2A

V

GS=1.5V, ID=100mA

V

GS=1.8V, ID=1.0A

V

GS=4.5V, ID=3.2A

0.015

0.018

0.021

0.024

0.027

0.03

0.033

0.036

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0.042

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I

D, DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs

Drain Current and Temperature

V

GS= 4.5V

VGS=1.8V

VGS=2.5V

VGS=4.5V

ID=1.0A

ID=3.2A

Ave RDS(ON) (R)@150°C

Ave RDS(ON) (R)@125°C

Ave RDS(ON) (R)@85°C

Ave RDS(ON) (R)@25°C

Ave RDS(ON) (R)@-55°C

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