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LF444 Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LF444
Description  Quad Low Power JFET Input Operational Amplifier
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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 3 page
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AC Electrical Characteristics (Note 5)
Symbol
Parameter
Conditions
LF444A
LF444
Units
Min
Typ
Max
Min
Typ
Max
Amplifier-to-Amplifier
−120
−120
dB
Coupling
SR
Slew Rate
V
S = ±15V, TA = 25˚C
1
1
V/µs
GBW
Gain-Bandwidth Product
V
S = ±15V, TA = 25˚C
1
1
MHz
e
n
Equivalent Input Noise Voltage
T
A = 25˚C, RS = 100Ω,
35
35
f = 1 kHz
i
n
Equivalent Input Noise Current
T
A = 25˚C, f = 1 kHz
0.01
0.01
Note 1: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 2: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 3: For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θjA.
Note 4: The LF444A is available in both the commercial temperature range 0˚C
≤ TA ≤ 70˚C and the military temperature range −55˚C ≤ TA ≤ 125˚C. The LF444 is
available in the commercial temperature range only. The temperature range is designated by the position just before the package type in the device number. A “C”
indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in “D” package only.
Note 5: Unless otherwise specified the specifications apply over the full temperature range and for VS = ±20V for the LF444A and for VS = ±15V for the LF444. VOS,
IB, and IOS are measured at VCM = 0.
Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to limited pro-
duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem-
perature as a result of internal power dissipation, PD.Tj = TA + θjAPD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended
if input bias current is to be kept to a minimum.
Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
±15V to ±5V for the LF444 and from ±20V to ±5V for the LF444A.
Note 8: Refer to RETS444X for LF444MD military specifications.
Note 9: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside
guaranteed limits.
Note 10: Human body model, 1.5 k
Ω in series with 100 pF.
Note 11: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Typical Performance Characteristics
Input Bias Current
DS009156-12
Input Bias Current
DS009156-13
Supply Current
DS009156-14
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