SiHJ8N60E-T1-GE3 datasheet(1/11 Pages) VISHAY

Part #	SiHJ8N60E-T1-GE3

Description	E Series Power MOSFET

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SiHJ8N60E

www.vishay.com

Vishay Siliconix

S15-2485-Rev. A, 19-Oct-15

1

Document Number: 91563

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) Ron x Qg

• Low input capacitance (Ciss)

• Reduced switching and conduction losses

• Ultra low gate charge (Qg)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Switch mode power supplies (SMPS)

• Flyback converter

• Lighting

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Consumer

- Wall adaptors

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25

Ω, IAS = 2.5 A.

c. ISD

≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C.

PRODUCT SUMMARY

VDS (V) at TJ max.

650

RDS(on) typ. at 25 °C (

Ω)VGS = 10 V

0.45

Qg max. (nC)

44

Qgs (nC)

5

Qgd (nC)

10

Configuration

Single

N-Channel MOSFET

G

D

S

PowerPAK® SO-8L Single

ORDERING INFORMATION

Package

PowerPAK SO-8L

Lead (Pb)-free and Halogen-free

SiHJ8N60E-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current (TJ = 150 °C)

VGS at 10 V

TC = 25 °C

ID

8

A

TC = 100 °C

5

Pulsed Drain Current a

IDM

18

Linear Derating Factor

0.71

W/°C

Single Pulse Avalanche Energy b

EAS

88

mJ

Maximum Power Dissipation

PD

89

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Drain-Source Voltage Slope

TJ = 125 °C

dV/dt

70

V/ns

Reverse Diode dV/dt d

17

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

52

65

°C/W

Maximum Junction-to-Case (Drain)

RthJC

11.4

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