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NCV887300D1R2G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCV887300D1R2G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 11 page NCV8873 www.onsemi.com 3 ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated) Rating Value Unit Dc Supply Voltage (VIN) −0.3 to 40 V Peak Transient Voltage (Load Dump on VIN) 45 V Dc Supply Voltage (VDRV, GDRV) 12 V Peak Transient Voltage (VFB) −0.3 to 6 V Dc Voltage (VC, VFB, ISNS) −0.3 to 3.6 V Dc Voltage (EN/SYNC) −0.3 to 6 V Dc Voltage Stress (VIN − VDRV)* −0.7 to 40 V Operating Junction Temperature −40 to 150 °C Storage Temperature Range −65 to 150 °C Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C 265 peak °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *An external diode from the input to the VIN pin is required if bootstrapping VDRV and VIN off of the output voltage. PACKAGE CAPABILITIES Characteristic Value Unit ESD Capability (All Pins) Human Body Model Machine Model w2.0 w200 KV V Moisture Sensitivity Level 1 Package Thermal Resistance Junction−to−Ambient, RqJA (Note 1) 100 °C/W 1. 1 in2, 1 oz copper area used for heatsinking. Ordering Options The NCV8873 features several variants to better fit a multitude of applications. The table below shows the typical values of parameters for the parts that are currently available. TYPICAL VALUES YY Dmax fs tss Sa Vcl Isrc Isink VDRV NCV887300 86.5% 1000 kHz 1.6 ms 130 mV/ms 400 mV 800 mA 600 mA 6.3 V NCV887301 87.5% 400 kHz 4.0 ms 30 mV/ms 200 mV 800 mA 600 mA 6.3 V DEFINITIONS Symbol Characteristic Symbol Characteristic Symbol Characteristic Dmax Maximum duty cycle fs Switching frequency tss Soft−start time Sa Slope compensating ramp Vcl Current limit trip voltage Isrc Gate drive sourcing current Isink Gate drive sinking current VDRV Drive voltage |
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