℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Units

Off Characteristics

Drain-source breakdown voltage

30

V

Zero gate voltage drain current

1

µA

Gate-source leakage current

±100

nA

On characteristics (note 3)

32

mΩ

38

mΩ

Drain-source on-resistance

45

mΩ

Forward tranconductance

8

S

Gate threshold voltage

0.7

1.4

V

Dynamic Characteristics

(note 4,5)

Input capacitance

1155

pF

Output capacitance

108

pF

Reverse transfer capacitance

84

pF

Gate resistance

3.6

Ω

Switching Characteristics

(note 4,5)

Turn-on delay time

5

ns

Turn-on rise time

7

ns

Turn-off delay time

40

ns

Turn-off fall time

6

ns

Drain-source diode characteristics and maximum ratings

1

V

Note :

1.

Repetitive Rating : Pulse width limited by maximum junction temperature.

2.

Surface Mounted on FR4 Board, t < 5 sec.

3.

Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.

4.

Guaranteed by design, not subject to production testing.

2 of 3

A,Dec,2010

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CJ3400A