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DMC3400SDW Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMC3400SDW Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 9 page DMC3400SDW Document number: DS37690 Rev. 1 - 2 2 of 9 www.diodes.com February 2015 © Diodes Incorporated DMC3400SDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value_Q1 Value_Q2 Units Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25C TA = +70C ID 0.65 0.50 -0.45 -0.36 A Maximum Continuous Body Diode Forward Current (Note 6) IS 0.4 -0.35 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 4 -3 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 0.31 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 406 °C/W Total Power Dissipation (Note 6) PD 0.39 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 319 °C/W Thermal Resistance, Junction to Case RθJC 126 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics – N Channel – Q1 (@T A = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS - - ±10 μA VGS = ±16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.8 - 1.6 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - 0.2 0.4 Ω VGS = 10V, ID = 0.59A - 0.3 0.7 VGS = 4.5V, ID = 0.2A Diode Forward Voltage VSD - 0.8 1.2 V VGS = 0V, IS = 0.23A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 55 - pF VDS = 15V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 8.5 - pF Reverse Transfer Capacitance Crss - 6.5 - pF Gate Resistance Rg - 92 - Ω VDS = VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) Qg - 0.6 - nC VDS = 10V, ID = 250mA Total Gate Charge (VGS = 10V) Qg - 1.4 - nC Gate-Source Charge Qgs - 0.2 - nC Gate-Drain Charge Qgd - 0.1 - nC Turn-On Delay Time tD(ON) - 3.8 - ns VGS = 10V, VDS = 30V, ID = 100mA, RG = 1Ω Turn-On Rise Time tR - 3.5 - ns Turn-Off Delay Time tD(OFF) - 25.2 - ns Turn-Off Fall Time tF - 18.8 - ns |
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