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MMBTA05 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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MMBTA05 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. |
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1 / 2 page  Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FEATURES MAXIMUM RATINGS (TA=25 unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) 1. BASE 2. EMITTER SOT-23 3. COLLECTO (NPN) MMBTA05 · Epitaxial Planar Die Construction · Complementary PNP Types Available (MMBTA55 / MMBTA56) · Ideal for Medium Power Amplification and Switching Characteristic Symbol MMBTA05 MMBTA06 Unit Collector-Base Voltage VCBO 60 80 V Collector-Emitter Voltage VCEO 60 80 V Emitter-Base Voltage VEBO 4.0 V Collector Current - Continuous (Note 1) IC 500 mA Power Dissipation (Note 1) Pd 350 mW Thermal Resistance, Junction to Ambient (Note 1) RqJA 357 K/W Operating and Storage and Temperature Range Tj,TSTG -55 to +150 °C Note: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Collector-Base Breakdown Voltage MMBTA05 MMBTA06 V(BR)CBO 60 80 ¾ V IC = 100 mA, IE = 0 Collector-Emitter Breakdown Voltage MMBTA05 MMBTA06 V(BR)CEO 60 80 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 4.0 ¾ V IE = 100 mA, IC = 0 Collector Cutoff Current MMBTA05 MMBTA06 ICBO ¾ 100 nA VCB = 60V, IE = 0 VCB = 80V, IE = 0 Collector Cutoff Current MMBTA05 MMBTA06 ICES ¾ 100 nA VCE = 60V, IBO = 0V VCE = 80V, IBO = 0V ON CHARACTERISTICS (Note 2) DC Current Gain hFE 100 ¾¾ IC = 10mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.25 V IC = 100mA, IB = 10mA Base- Emitter Saturation Voltage VBE(SAT) ¾ 1.2 V IC = 100mA, VCE = 1.0V SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product fT 100 ¾ MHz VCE = 2.0V, IC = 10mA, f = 100MHz MMBTA06 |
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Similar Description - MMBTA05 |
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