MMBT5401 datasheet(1/2 Pages) HOTTECH

Part #	MMBT5401

Description	Plastic-Encapsulate Transistors

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Manufacturer	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Direct Link	http://www.hottech.net.cn/

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Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Complementary to MMBT5551

Ideal for medium power amplification and switching

MARKING: 2L

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-160

V

Collector-Emitter Voltage

V

CEO

-150

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-0.6

A

Collector Power Dissipation

PC

0.3

W

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC= -100μA,

IE=0

-160

V

Collector-emitter breakdown voltage

VCEO

IC= -1mA,

IB=0

-150

V

Emitter-base breakdown voltage

VEBO

IE= -10μA, IC=0

-5

V

Collector cut-off current

ICB

O

VCB=-120 V ,

IE=0

-0.1

μA

Emitter cut-off current

IEB

O

VEB=-4V ,

IC=0

-0.1

μA

DC current gain

hFE1

VCE= -5V, IC= -1mA

80

hFE2

VCE= -5V,

IC=-10mA

100

300

hFE3

VCE= -5V,

IC=-50mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=-50 mA,

IB= -5mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC= -50 mA,

IB=

-5mA

-1

V

Transition frequency

fT

VCE= -5V,

IC=

-10mA

f=30MHz

100

MHz

(PNP)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

MMBT5401

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MMBT5401 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

MMBT5401 Datasheet(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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