SI4490DY datasheet(2/4 Pages) VISHAY

Part #	SI4490DY

Description	N-Channel 200-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4490DY

Vishay Siliconix

www.vishay.com

2

Document Number: 71341

S-03951—Rev. B, 26-May-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

2.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 160 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 160 V, VGS = 0 V, TJ = 55_C

5

mA

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

40

A

Drain Source On State Resistancea

rDS( )

VGS = 10 V, ID = 4.0 A

0.065

0.080

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 6.0 V, ID = 4.0 A

0.070

0.090

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 5 A

19

S

Diode Forward Voltagea

VSD

IS = 2.8 A, VGS = 0 V

0.75

1.2

V

Dynamicb

Total Gate Charge

Qg

34

42

Gate-Source Charge

Qgs

VDS = 100 V, VGS = 10 V, ID = 4.0 A

7.5

nC

Gate-Drain Charge

Qgd

12.0

Gate Resistance

Rg

0.2

0.85

1.3

W

Turn-On Delay Time

td(on)

14

20

Rise Time

tr

VDD = 100 V, RL = 25 W

20

30

Turn-Off Delay Time

td(off)

VDD = 100 V, RL = 25 W

ID ^ 4.0 A, VGEN = 10 V, RG = 6 W

32

50

ns

Fall Time

tf

25

35

Source-Drain Reverse Recovery Time

trr

IF = 2.8 A, di/dt = 100 A/ms

70

100

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

5

10

15

20

25

30

35

40

0123456

0

8

16

24

32

40

02468

10

VGS = 10 thru 6 V

TC = 125_C

-55

_

C

25

_C

Output Characteristics

Transfer Characteristics

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

5 V

4 V

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