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SI3457BDV-T1 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI3457BDV-T1 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Si3457BDV Vishay Siliconix www.vishay.com 2 Document Number: 72019 S-40424—Rev. D, 15-Mar-04 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA −1.0 −3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V −1 mA Zero Gate Voltage Drain Current IDSS VDS = −30 V, VGS = 0 V, TJ = 85_C −5 mA On-State Drain Currenta ID(on) VDS v −5 V, VGS = −10 V −20 A Drain Source On State Resistancea rDS( ) VGS = −10 V, ID = −5.0 A 0.044 0.054 W Drain-Source On-State Resistancea rDS(on) VGS = −4.5 V, ID = −3.7 A 0.082 0.100 W Forward Transconductancea gfs VDS = −15 V, ID = −5.0 A 10 S Diode Forward Voltagea VSD IS = −1.7 A, VGS = 0 V −0.8 −1.2 V Dynamicb Total Gate Charge Qg 12.5 19 Gate-Source Charge Qgs VDS = −15 V, VGS = −10 V, ID = −5.0 A 2.1 nC Gate-Drain Charge Qgd 3.5 Turn-On Delay Time td(on) 7 15 Rise Time tr VDD = −15 V, RL = 15 W 10 15 Turn-Off Delay Time td(off) VDD = −15 V, RL = 15 W ID ^ −1 A, VGEN = −10 V, Rg = 6 W 30 45 ns Fall Time tf 22 35 Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms 25 60 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 4 8 12 16 20 0 1234 5 0 4 8 12 16 20 0 123 456 VGS = 10 thru 5 V TC = 125_C −55_C 4 V 25_C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) VGS − Gate-to-Source Voltage (V) 3 V |
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