SI3457BDV-T1 datasheet(2/5 Pages) VISHAY

Part #	SI3457BDV-T1

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si3457BDV

Vishay Siliconix

www.vishay.com

2

Document Number: 72019

S-40424—Rev. D, 15-Mar-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−1.0

−3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −30 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −30 V, VGS = 0 V, TJ = 85_C

−5

mA

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −10 V

−20

A

Drain Source On State Resistancea

rDS( )

VGS = −10 V, ID = −5.0 A

0.044

0.054

W

Drain-Source On-State Resistancea

rDS(on)

VGS = −4.5 V, ID = −3.7 A

0.082

0.100

W

Forward Transconductancea

gfs

VDS = −15 V, ID = −5.0 A

10

S

Diode Forward Voltagea

VSD

IS = −1.7 A, VGS = 0 V

−0.8

−1.2

V

Dynamicb

Total Gate Charge

Qg

12.5

19

Gate-Source Charge

Qgs

VDS = −15 V, VGS = −10 V, ID = −5.0 A

2.1

nC

Gate-Drain Charge

Qgd

3.5

Turn-On Delay Time

td(on)

7

15

Rise Time

tr

VDD = −15 V, RL = 15 W

10

15

Turn-Off Delay Time

td(off)

VDD = −15 V, RL = 15 W

ID ^ −1 A, VGEN = −10 V, Rg = 6 W

30

45

ns

Fall Time

tf

22

35

Source-Drain Reverse Recovery Time

trr

IF = −1.7 A, di/dt = 100 A/ms

25

60

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0

1234

5

0

4

8

12

16

20

0

123

456

VGS = 10 thru 5 V

TC = 125_C

−55_C

4 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

3 V

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