NCP1377, NCP1377B

http://onsemi.com

3

Figure 2. Internal Circuit Architecture

HV

GND

Demag

4 mA

To Internal

Supply

+

+

12.5 V

7.5 V

5.6 V (Fault)

Fault

Mngt.

PON

5 V

+

OVP

+

/1.44

4.5 us

Delay

1.5 us for B Version

Demag

8 us

Blanking

S

S

R R

Q

Q

+

3 us for

B Version

+

-

Overload?

5 us

Timeout

Time

Reset

Demag

380 ns

LEB

1 V

/3

200 mA

when DRV

is OFF

FB

4.2 V

Driver src = 20 sink = 10

Drv

CS

+

50 mV

10 V

Rint

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Continuous Power Supply or Drive Voltage

18

V

25

V

−

−0.3 to 10

V

odes are activated

−

5.0

mA

Maximum Current in Pin 1

Idem

+3.0/−2.0

mA

Thermal Resistance, Junction−to−Case

57

°C/W

Thermal Resistance, Junction−to−Air, SOIC Version

178

°C/W

Thermal Resistance, Junction−to−Air, PDIP Version

100

°C/W

Maximum Junction Temperature

150

°C

Temperature Shutdown

−

155

°C

Hysteresis in Shutdown

−

30

°C

Storage Temperature Range

−

−60 to +150

°C

−

2.0

kV

ESD Capability, Machine Model

−

200

V

500

V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.