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M68AF511AL55NC6T Datasheet(PDF) 7 Page - STMicroelectronics

Part # M68AF511AL55NC6T
Description  4 Mbit (512K x8), 5V Asynchronous SRAM
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M68AF511AL55NC6T Datasheet(HTML) 7 Page - STMicroelectronics

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M68AF511A
Table 4. Capacitance
Note: 1. Sampled only, not 100% tested.
2. At TA = 25°C, f = 1MHz, VCC = 5.0V.
Table 5. DC Characteristics
Note: 1. Average AC current, cycling at tAVAV minimum.
2. E = VIL, VIN = VIH or VIL.
3. E
≤ 0.2V, VIN ≤ 0.2V or VIN
≥ VCC – 0.2V.
4. Output disable.
Symbol
Parameter(1,2)
Test
Condition
Min
Max
Unit
CIN
Input Capacitance on all pins (except DQ)
VIN = 0V
6pF
COUT
Output Capacitance
VOUT = 0V
8pF
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ICC1
(1,2)
Operating Supply Current
VCC = 5.5V,
f = 1/tAVAV, IOUT = 0mA
55
mA
ICC2
(3)
Operating Supply Current
VCC = 5.5V,
f = 1MHz
, IOUT = 0mA
5mA
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
–1
1
µA
ILO
(4)
Output Leakage Current
0V
≤ VOUT ≤ VCC
–1
1
µA
ISB
Standby Supply Current CMOS
VCC = 5.5V, E ≥ VCC – 0.2V,
f= 0
510
µA
VIH
Input High Voltage
2.2
VCC + 0.3
V
VIL
Input Low Voltage
–0.3
0.8
V
VOH
Output High Voltage
IOH = –1.0mA
2.4
V
VOL
Output Low Voltage
IOL = 2.1mA
0.4
V


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