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2N6312 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6312 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2N6312 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0 -40 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -0.7 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -2.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -1.25A -4.0 V VBE(on) Base-Emitter On Voltage IC= -1.5A ; VCE= -2V -1.4 V ICEO Collector Cutoff Current VCE= -30V; IB= 0 -1.0 mA ICBO Collector Cutoff Current VCB= -40V; IE= 0 -50 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.5 mA hFE-1 DC Current Gain IC= -0.5A ; VCE= -2V 40 hFE-2 DC Current Gain IC= -1.5A ; VCE= -2V 25 100 hFE-3 DC Current Gain IC= -3A ; VCE= -2V 10 hFE-4 DC Current Gain IC= -5A ; VCE= -4V 4 fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -10V, ftest= 1MHz 4 MHz COB Output Capacitance IE= 0;VCB= -10V; ftest= 0.1MHz 300 pF |
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