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NCP1055P100G Datasheet(PDF) 6 Page - ON Semiconductor |
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NCP1055P100G Datasheet(HTML) 6 Page - ON Semiconductor |
6 / 25 page NCP1050, NCP1051, NCP1052, NCP1053, NCP1054, NCP1055 www.onsemi.com 6 MAXIMUM RATINGS Rating Symbol Value Unit Power Switch and Startup Circuit Drain Voltage Range Drain Current Peak During Transformer Saturation VDS IDS(pk) *0.3 to 700 2.0 x Ilim Max V A Power Supply/VCC Bypass and Control Input Voltage Range Current VIR Imax *0.3 to 10 100 V mA Thermal Characteristics P Suffix, Plastic Package Case 626A−01 Junction−to−Lead Junction−to−Air, 2.0 Oz. Printed Circuit Copper Clad 0.36 Sq. Inch 1.0 Sq. Inch ST Suffix, Plastic Package Case 318E−04 Junction−to−Lead Junction−to−Air, 2.0 Oz. Printed Circuit Copper Clad 0.36 Sq. Inch 1.0 Sq. Inch RqJL RqJA RqJL RqJA 9.0 77 60 14 74 55 °C/W Operating Junction Temperature TJ *40 to +150 °C Storage Temperature Tstg *65 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series contains ESD protection and exceeds the following tests: Pins 1−3: Human Body Model 2000 V per JEDEC JESD22−A114−F. Machine Model Method 400 V per JEDEC JESD22−A115−A. Pin 5: Human Body Model 1000 V per JEDEC JESD22−A114−F. Machine Model Method 400 V per JEDEC JESD22−A115−A. Pin 5 is connected to the power switch and start−up circuits, and is rated only to the max voltage of the part, or 700 V. Charged Device Model (CDM) 1000 V per JEDEC Standard JESD22−C101E. 2. This device contains Latch−up protection and exceeds $100 mA per JEDEC Standard JESD78. |
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