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NCP785AH33T1G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP785AH33T1G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 10 page NCP785A www.onsemi.com 4 Table 6. ELECTRICAL CHARACTERISTICS, VOUT = 12 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF, COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 6) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage DC VIN 55 450 V Output Voltage Accuracy TJ = 25°C, Iout = 100 mA, 55 V ≤ Vin ≤ 450 V VOUT 11.460 12 12.540 V −40 °C ≤ TJ ≤ 85°C, Iout = 100 mA, 55 V ≤ Vin ≤ 450 V VOUT 11.4 12 12.6 V Line Regulation 55 V ≤ Vin ≤ 450 V, Iout = 100 mA RegLINE −0.5 0.1 +0.5 %/V Load Regulation 100 mA ≤ IOUT ≤ 10 mA, Vin = 65 V RegLOAD −1.0 0.66 +1.0 % Maximum Output Current (Note 7) 55 V ≤ Vin ≤ 450 V IOUT 10.5 mA Quiescent Current IOUT = 0, 55 V ≤ Vin ≤ 450 V IQ 17 22 mA Ground Current (Note 7) 55 V ≤ Vin ≤ 450 V 0 < IOUT ≤ 10 mA IGND 25 mA Power Supply Rejection Ratio Vin = 340 VDC +1 Vpp modulation, Iout = 100 mA f = 1 kHz PSRR 70 dB Noise f = 100 Hz to 100 kHz Vin = 340 VDC, Iout = 100 mA VNOISE 420 mVrms Thermal Shutdown Temperature (Note 8) Temperature increasing from TJ = +25°C TSD 145 °C Thermal Shutdown Hysteresis (Note 8) Temperature falling from TSD TSDH − 10 − °C Table 7. ELECTRICAL CHARACTERISTICS, VOUT = 15 V (−40°C ≤ TJ ≤ 85°C; VIN = 340 V; IOUT = 100 mA, CIN = 2.2 mF, COUT = 22 mF, unless otherwise noted. Typical values are at TJ = +25°C.) (Note 6) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage DC VIN 60 450 V Output Voltage Accuracy TJ = 25°C, Iout = 100 mA, 60 V ≤ Vin ≤ 450 V VOUT 14.325 15 15.675 V −40 °C ≤ TJ ≤ 85°C, Iout = 100 mA, 60 V ≤ Vin ≤ 450 V VOUT 14.25 15 15.75 V Line Regulation 60 V ≤ Vin ≤ 450 V, Iout = 100 mA RegLINE −0.5 0.1 +0.5 %/V Load Regulation 100 mA ≤ IOUT ≤ 10 mA, Vin = 65 V RegLOAD −1.0 0.66 +1.0 % Maximum Output Current (Note 7) 65 V ≤ Vin ≤ 450 V IOUT 10.5 mA Quiescent Current IOUT = 0, 60 V ≤ Vin ≤ 450 V IQ 18 22 mA Ground Current (Note 7) 60 V ≤ Vin ≤ 450 V 0 < IOUT ≤ 10 mA IGND 25 mA Power Supply Rejection Ratio Vin = 340 VDC +1 Vpp modulation, Iout = 100 mA f = 1 kHz PSRR 70 dB Noise f = 100 Hz to 100 kHz Vin = 340 VDC, Iout = 100 mA VNOISE 500 mVrms Thermal Shutdown Temperature (Note 8) Temperature increasing from TJ = +25°C TSD 145 °C Thermal Shutdown Hysteresis (Note 8) Temperature falling from TSD TSDH − 10 − °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25 °C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 7. A proper heatsinking and/or low duty cycle pulse techniques are used to operate the device within the Safe Operating Area. 8. Guaranteed by design |
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