FLASH MEMORY

11

K9K4G08Q0M

K9K4G16Q0M

K9K4G08U0M

K9K4G16U0M

K9W8G08U1M

Program / Erase Characteristics

NOTE : 1. Max. time of

Parameter

Symbol

Min

Typ

Max

Unit

Program Time

-

300

700

µs

Dummy Busy Time for Cache Program

3

700

µs

Number of Partial Program Cycles

in the Same Page

Main Array

Nop

-

-

4

cycles

Spare Array

-

-

4

cycles

Block Erase Time

-

2

3

ms

AC Timing Characteristics for Command / Address / Data Input

NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.

Parameter

Symbol

K9K4G16U0M(3.3V)

K9K4GXXQ0M(1.8V)

K9XXG08UXM(3.3V)

Unit

Min

Max

Min

Max

CLE setup Time

25

-

10

-

ns

CLE Hold Time

10

-

5

-

ns

CE setup Time

35

-

15

-

ns

CE Hold Time

10

-

5

-

ns

WE Pulse Width

25

-

15

-

ns

ALE setup Time

25

-

10

-

ns

ALE Hold Time

10

-

5

-

ns

Data setup Time

20

-

10

-

ns

Data Hold Time

10

-

5

-

ns

Write Cycle Time

45

-

30

-

ns

WE High Hold Time

15

-

10

-

ns

ALE to Data Loading Time

100

-

100

-

ns