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K7A803609B Datasheet(PDF) 1 Page - Samsung semiconductor |
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K7A803609B Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 18 page K7A801809B 256Kx36 & 512Kx18 Synchronous SRAM - 1 - Rev 3.0 Nov. 2003 K7A803609B Document Title 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Revision History Rev. No. 0.0 0.1 0.2 0.3 1.0 2.0 2.1 3.0 Remark Preliminary Preliminary Preliminary Preliminary Final Final Final Final History Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final spec release 2. Change ISB2 form 50mA to 60mA Remove tCYC 225MHz(-22) 1. Delete 119BGA package 1. Remove x32 organization 2. Remove -20 speed bin Draft Date May. 18 . 2001 June. 26. 2001 Aug. 11. 2001 Aug. 28. 2001 Nov. 16. 2001 April. 01. 2002 April. 04. 2003 Nov. 17. 2003 |
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