K6X0808T1D-B datasheet(4/9 Pages) SAMSUNG

Part #	K6X0808T1D-B

Description	32Kx8 bit Low Power CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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CMOS SRAM

K6X0808T1D Family

Revision 1.0

December 2003

4

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. Industrial Product: TA=-40 to 85

°C, Otherwise specified

Automotive Product: TA=-40 to 125

°C, Otherwise specified

2. Overshoot: Vcc+3.0V in case of pulse width

≤30ns.

3. Undershoot: -3.0V in case of pulse width

≤30ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

2.7

3.0/3.3

3.6

V

Ground

Vss

0

V

Input high voltage

VIH

2.2

-

Vcc+0.22)

V

Input low voltage

VIL

-0.23)

-

0.6

V

CAPACITANCE1) (f=1MHz, TA=25

°C)

1. Capacitance is sampled, not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

-

8

pF

Input/Output capacitance

CIO

VIO=0V

-

10

pF

DC AND OPERATING CHARACTERISTICS

Item

Symbol

Test Conditions

Min Typ Max Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

-

1

µA

Output leakage current

ILO

CS=VIH or OE=VIH or WE=VIL, VIO=VSS to Vcc

-1

-

1

µA

Operating power supply current

ICC

IIO=0mA, CS=VIL, VIN=VIH or VIL, Read

-

2

mA

Average operating current

ICC1

Cycle time=1

µs, 100% duty, IIO=0mA, CS≤0.2V,

VIN

≤0.2VIN≥Vcc -0.2V

-

3

mA

ICC2

Cycle time=Min,100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL

-

20

mA

Output low voltage

VOL

IOL=2.1mA

-

0.4

V

Output high voltage

VOH

IOH=-1.0mA

2.4

-

V

Standby Current(TTL)

ISB

CS=VIH, Other inputs=VIH or VIL

-

0.3

mA

Standby Current(CMOS)

ISB1

CS

≥Vcc-0.2V, Other inputs=0~Vcc

K6X0808T1D-F

-

6

µA

K6X0808T1D-Q

-

10

µA

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