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K4S511632M-TL1L Datasheet(PDF) 3 Page - Samsung semiconductor |
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K4S511632M-TL1L Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 11 page K4S511632M CMOS SDRAM Rev. 0.3 May. 2002 The K4S511632M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16bits, fabricated with SAMSUNG's high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM for masking • Auto & self refresh • 64ms refresh period (8K cycle) GENERAL DESCRIPTION FEATURES FUNCTIONAL BLOCK DIAGRAM 8M x 16Bit x 4 Banks Synchronous DRAM Samsung Electronics reserves the right to change products or specification without notice. * Bank Select Data Input Register 8M x 16 8M x 16 Column Decoder Latency & Burst Length Programming Register LCKE LRAS LCBR LWE LDQM CLK CKE CS RAS CAS WE DQM LWE LDQM DQi CLK ADD LCAS LWCBR 8M x 16 8M x 16 Timing Register ORDERING INFORMATION Part No. Max Freq. Interface Package K4S511632M-TC/TL75 133MHz(CL=3) LVTTL 54pin TSOP(II) K4S511632M-TC/TL1H 100MHz(CL=2) K4S511632M-TC/TL1L 100MHz(CL=3) |
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