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K4X56163PE Datasheet(PDF) 9 Page - Samsung semiconductor |
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K4X56163PE Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 48 page K4X56163PE-L(F)G March 2004 9 Mobile-DDR SDRAM Figure.3 EMRS code and TCSR , PASR Note : 1. In order to save power consumption, Mobile DDR SDRAM includes PASR option. 2. Mobile DDR SDRAM supports three kinds of PASR in self refresh mode; Full Array, 1/2 Array, 1/4 Array. Partial Self Refresh Area Partial Array Self Refresh (PASR ) BA1=0 BA0=0 BA1=0 BA0=1 BA1=1 BA0=1 BA1=1 BA0=0 BA1=0 BA0=0 BA1=0 BA0=1 BA1=1 BA0=1 BA1=1 BA0=0 BA1=0 BA0=0 BA1=0 BA0=1 BA1=1 BA0=1 BA1=1 BA0=0 Note : 1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the self refresh cycle automatically according to the two temperature range ; Max. 40 °C, Max. 85 °C. 2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored. Temperature Range Self Refresh Current (Icc 6) Unit Full Array 1/2 Array 1/4 Array Max. 40 °C 150 125 115 uA Max. 85 °C 400 300 250 Internal Temperature Compensated Self Refresh (TCSR) - Full Array - 1/2 Array - 1/4 Array |
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