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IRF7309 Datasheet(PDF) 2 Page - International Rectifier |
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IRF7309 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  148 IRF7309 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS Drain-to-Source Breakdown Voltage ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance V V/°C Ω V S µA nC ns nH pF N-Channel ID = 2.6A, VDS = 16V, VGS = 4.5V P-Channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0Ω, RD = 3.8Ω P-Channel VDD = -10V, ID = -2.2A, RG = 6.0Ω, RD = 4.5Ω N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz N-Ch P-Ch Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF = 2.6A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -2.2A, di/dt = 100A/µs Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) Parameter Min. Typ. Max. Units Conditions N-Ch 30 — — VGS = 0V, ID = 250µA P-Ch -30 — — VGS = 0V, ID = -250µA N-Ch — 0.032 — Reference to 25°C, ID = 1mA P-Ch — -0.037 — Reference to 25°C, ID = -1mA — — 0.050 VGS = 10V, ID = 2.4A — — 0.080 VGS = 4.5V, ID = 2.0A — — 0.10 VGS = -10V, ID = -1.8A — — 0.16 VGS = -4.5V, ID = -1.5A N-Ch 1.0 — — VDS = VGS, ID = 250µA P-Ch -1.0 — — VDS = VGS, ID = -250µA N-Ch 5.2 — — VDS = 15V, ID = 2.4A P-Ch 2.5 — — VDS = -24V, ID = -1.8A N-Ch — — 1.0 VDS = 24V, VGS = 0V P-Ch — — -1.0 VDS = -24V, VGS = 0V N-Ch — — 25 VDS = 24V, VGS = 0V, TJ = 125°C P-Ch — — -25 VDS = -24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 20V N-Ch — — 25 P-Ch — — 25 N-Ch — — 2.9 P-Ch — — 2.9 N-Ch — — 7.9 P-Ch — — 9.0 N-Ch — 6.8 — P-Ch — 11 — N-Ch — 21 — P-Ch — 17 — N-Ch — 22 — P-Ch — 25 — N-Ch — 7.7 — P-Ch — 18 — LD Internal Drain Inductace N-P — 4.0 — Between lead tip LS Internal Source Inductance N-P — 6.0 — and center of die contact N-Ch — 520 — P-Ch — 440 — N-Ch — 180 — P-Ch — 200 — N-Ch — 72 — P-Ch — 93 — Parameter Min. Typ. Max. Units Conditions N-Ch — — 1.8 P-Ch — — -1.8 N-Ch — — 16 P-Ch — — -12 N-Ch — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V P-Ch — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V N-Ch — 47 71 P-Ch — 53 80 N-Ch — 56 84 P-Ch — 66 99 ton Forward Turn-On Time N-P Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. |
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