Si6820DQ

Vishay Siliconix

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2-4

Document Number: 70790

S-56936—Rev. C, 23-Nov-98

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

MOSFET

–0.5

–0.25

0.00

0.25

0.50

–50

–25

0

25

50

75

100

125

150

1.8

0

0.1

0.2

0.3

0.4

0123456

2

1

0.1

0.01

110

30

1

10

Duty Cycle = 0.5

0.2

0.1

0.05

0.02

Single Pulse

0.01

0

1

25

30

10

20

10

30

1. Duty Cycle, D =

Notes:

4. Surface Mounted

0.1

0.2

0.4

0.6

0.8

1.0

Threshold Voltage

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

Time (sec)

15

5