Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

IC = -1A Continuous Collector Current

Low Saturation Voltage VCE(sat) < -500mV @ -0.5A

Epitaxial Planar Die Construction

Complementary NPN types: BCX54, 55, and 56

unless otherwise noted)

Characteristic

Symbol

BCX51

BCX52

BCX53

Unit

Collector-Base Voltage

VCBO

-45

-60

-100

V

Collector-Emitter Voltage

VCEO

-45

-60

-80

V

Emitter-Base Voltage

VEBO

-5

V

Continuous Collector Current

IC

-1

A

Peak Pulse Collector Current

ICM

-1.5

Continuous Base Current

IB

-100

mA

Peak Pulse Base Current

IBM

-200

Power Dissipation (Note 1)

PD

1

W

Operating and Storage Temperature Range

TJ, TSTG

-65 to +150

°C

unless otherwise specified)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base

Breakdown Voltage

BCX51

-45

-

-

V

BCX52

-60

BCX53

-100

Collector-Emitter

Breakdown Voltage (Note 2)

BCX51

-45

-

-

V

BCX52

-60

BCX53

-80

Emitter-Base Breakdown Voltage

-5

-

-

V

Collector Cut-off Current

-

-

-0.1

-20

µA

Emitter Cut-off Current

-

-

-20

nA

Static Forward Current Transfer Ratio (Note 2)

All versions

25

40

25

-

-

-

-

250

-

10 gain grp

63

-

160

16 gain grp

100

-

250

Collector-Emitter Saturation Voltage (Note 2)

-

-

-0.5

V

Base-Emitter Turn-On Voltage (Note 2)

-

-

-1.0

V

Transition Frequency

150

-

-

MHz

f = 100MHz

Output Capacitance

-

-

25

pF

Product

BCX51

BCX51-10

BCX51-16

BCX52

BCX52-10

BCX52-16

BCX53

BCX53-10

BCX53-16

Marking

AA

AC

AD

AE

AG

AM

AH

AK

AL

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

Notes: 2. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

Notes: 1. For a device surface mounted on 25 mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.