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NCP606MN28T2G Datasheet(PDF) 5 Page - ON Semiconductor

Part # NCP606MN28T2G
Description  500mA, Low IGND, CMOS LDO Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP606MN28T2G Datasheet(HTML) 5 Page - ON Semiconductor

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NCP605, NCP606
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
Vin = (Vout + 0.5 V) or 1.5 V, whichever is higher, Cin = 1 mF, Cout = 1 mF, for typical values TA = 25°C, for min/max values TA = −40°C to
85°C; unless otherwise noted. (Notes 9 and 10)
Parameter
Unit
Max
Typ
Min
Symbol
Test Conditions
Power Supply Ripple Rejection (Note 11)
Iout = 500 mA
Vout = 1.25 V
Vin − Vout = 1 V
f = 120 Hz, 0.5 VPP
f = 1 kHz, 0.5 VPP
f = 10 kHz, 0.5 VPP
PSRR
62
55
40
dB
Output Noise Voltage (Note 11)
f = 10 Hz to 100 kHz, Vout = 1.25 V
Vn
50
mVrms
Thermal Shutdown Temperature (Note 11)
TSD
175
°C
Thermal Shutdown Hysteresis (Note 11)
TSH
10
°C
7. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
8. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Low
duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
9. Maximum dropout voltage is limited to minimum input voltage Vin = 1.7 V recommended for guaranteed operation at maximum output
current.
10.Refer to application information section.
11. Values based on design and/or characterization.


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