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Version 3.0

Product Features

Applications

• GaN on SiC Chip on Board

• Surface Mount Hybrid Type

• 2-Stage Doherty Amplifier

• High Efficiency

• No Matching circuit needed

• RF Sub-Systems

• Base Station

• RRH

•4G/ LTE system

• Small cell

Description

Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH07003-20D amplifier fabricated using an advanced high power

density Gallium Nitride (GaN) semiconductor process.

PARAMETER

UNIT

MIN

TYP

MAX

CONDITION

Frequency Range

MHz

773

778

783

ZS = ZL = 50 ohm

Power Gain

dB

27

30

-

-

Gain Flatness

-1.5

-

+1.5

Input Return Loss

-

-14

-9

Pout @ Average

dBm

-

34.7

-

2.951W

Pout @ Saturation

dBm

42.2

42.7

-

Pulse Width=20us,

Duty cycle 10%

ACLR @ BW 10MHz

LTE (PAPR 7.5dB)

dBc

-

-29

-25

Non DPD

-

-53

-

With DPD

Doherty Efficiency

%

-

43

-

Tc=25℃

Total Efficiency

35

38

-

Drive Amp. Idq

mA

-

180

-

-

Carrier Amp. Idq

-

120

-

Inverted Doherty

Peaking Amp. Idq

-

0

-

Supply Voltage

V

-4.9

-4.5

-3.0

Vgc

-4.9

-2.8

-2.0

Vgp

-

5.0

-

Vds1

-

30

-

Vds2

Caution

The drain voltage must be supplied to the device after the gate voltage is supplied

Turn on  Turn on the Gate voltage supply and last turn on the Drain voltage supplies

Turn off  Turn off the Drain voltage and last turn off the Gate voltage

Note

1. ACLR Measured Pout=34.7dBm @ fc± 10MHz / 9.015MHz

LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF

Mechanical Specifications

PARAMETER

UNIT

TYPICAL

RATING

Mass

g

6.0

±1.0

Dimension

㎜

32 x 20 x 4.2

±0.15

Package Type : SP-1E