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BUK219-50Y Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK219-50Y Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page Philips Semiconductors Product Specification PowerMOS transistor BUK219-50Y TOPFET high side switch INPUT CHARACTERISTICS 9 V ≤ V BG ≤ 16 V. Limits are at -40˚C ≤ T mb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I I Input current V IG = 5 V 20 90 160 µA V IG Input clamping voltage I I = 200 µA 5.5 7 8.5 V V IG(ON) Input turn-on threshold voltage - 2.4 3 V V IG(OFF) Input turn-off threshold voltage 1.5 2.1 - V ∆V IG Input turn-on hysteresis - 0.3 - V I I(ON) Input turn-on current V IG = 3 V - - 100 µA I I(OFF) Input turn-off current V IG = 1.5 V 10 - - µA STATUS CHARACTERISTICS The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high. Limits are at -40˚C ≤ T mb ≤ 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V SG Status clamping voltage I S = 100 µA 5.5 7 8.5 V V SG Status low voltage I S = 100 µA- - 1 V T mb = 25˚C - 0.7 0.8 V I S Status leakage current V SG = 5 V - - 15 µA T mb = 25˚C - 0.1 1 µA I S Status saturation current 1 V SG = 5 V 2 7 12 mA Application information R S External pull-up resistor - 47 - k Ω OPEN CIRCUIT DETECTION CHARACTERISTICS An open circuit load can be detected in the on-state. Refer to TRUTH TABLE. Limits are at -40˚C ≤ T mb ≤ 150˚C and typical is at Tmb = 25 ˚C. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Open circuit detection 9 V ≤ V BG ≤ 35 V I L(TO) Low current detect threshold 50 - 340 mA T j = 25˚C 85 170 255 mA ∆I L(TO) Hysteresis - 30 - mA 1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to prevent possible interference with normal operation of the device. July 2001 4 Rev 2.000 |
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