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NCP717CMX285TCG Datasheet(PDF) 3 Page - ON Semiconductor

Part # NCP717CMX285TCG
Description  Regulator
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP717CMX285TCG Datasheet(HTML) 3 Page - ON Semiconductor

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NCP717
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS
−40
°C ≤ TJ ≤ 125°C; VIN = VOUT(NOM) + 0.5 V or 2.3 V, whichever is greater; IOUT = 10 mA, CIN = COUT = 1 mF, unless otherwise noted.
VEN = 0.9 V. Typical values are at TJ = +25°C. Min./Max. are for TJ = −40°C and TJ = +125°C respectively (Note 3).
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Operating Input Voltage
VIN
1.8
5.5
V
Output Voltage Accuracy
2.3 V
≤ VIN ≤ 4.2 V
IOUT = 0 − 300 mA
VOUT(nom) < 1.5 V
VOUT
−30
+30
mV
VOUT(NOM) + 0.5 V or
2.3 V
≤ VIN ≤ 5.5 V
IOUT = 0 − 300 mA
VOUT(nom) ≥ 1.5 V
−2
+2
%
Line Regulation
VOUT + 0.5 V or 2.3 V
≤ VIN ≤ 5.5 V,
IOUT = 10 mA
RegLINE
400
mV/V
Load Regulation
IOUT = 0 mA to 300 mA
RegLOAD
12
mV/mA
Load Transient
IOUT = 1 mA to 300 mA or 300 mA to 1 mA in
1
ms, COUT = 1 mF
TranLOAD
95
mV
Dropout Voltage (Note 4)
IOUT = 300 mA
VOUT = 2.5 V
VDO
190
350
mV
VOUT = 2.8 V
175
280
VOUT = 2.85 V
175
265
VOUT = 3.0 V
170
250
VOUT = 3.1 V
165
235
VOUT = 3.2 V
165
235
VOUT = 3.3 V
155
230
Output Current Limit
VOUT = 90% VOUT(nom)
ICL
379
500
mA
Ground Current
IOUT = 0 mA
IQ
25
35
mA
IOUT = 2 mA
IGND
105
IOUT = 300 mA
IGND
250
Shutdown Current
VEN
≤ 0.4 V, VIN = 5.5 V
IDIS
0.01
1
mA
EN Pin Threshold Voltage
High Threshold
Low Threshold
VEN Voltage increasing
VEN Voltage decreasing
VEN_HI
VEN_LO
0.9
0.4
V
EN Pin Input Current
VEN = 5.5 V
IEN
180
500
nA
Turn−on Time
COUT = 1.0 mF, From assertion of VEN to 98%
VOUT(NOM)
tON
200
ms
Power Supply Rejection Ratio
VIN = 3.6 V, VOUT = 3.1 V
IOUT = 150 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
PSRR
58
70
55
dB
Output Noise Voltage
VIN = 3.6 V, VOUT = 3.1 V, IOUT = 300 mA
f = 100 Hz to 100 kHz
VN
22
mVrms
Thermal Shutdown Temperature
Temperature increasing from TJ = +25
°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
20
°C
Active Output Discharge Resistance
VEN < 0.4 V
Version A
RDIS
1.2
k
W
Version C
120
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at
TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
4. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.5 V.


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