NCP12510 datasheet(5/27 Pages) ONSEMI

Part #	NCP12510

Description	Current-Mode PWM Controller for Off-line Power Supplies

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP12510

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Table 4. ELECTRICAL CHARACTERISTICS

(For typical values TJ = 25°C, for min/max values TJ = −40°C to +125°C, VCC = 12 V unless otherwise noted)

Symbol

Rating

Min

Typ

Max

Unit

SUPPLY SECTION

VCC(on)

VCC increasing level at which driving pulses are authorized

5

16

18

20

V

VCC(min)

VCC decreasing level at which driving pulses are stopped

5

8.3

8.9

9.5

V

VCC(hyst)

Hysteresis VCC(on) – VCC(min)

5

7.7

−

V

VCC(reset)

Latched state reset voltage

5

−

8.6

−

V

VCC(reset_

hyst)

Defined hysteresis between minimum and reset voltage VCC(min) –

VCC(reset)

5

0.15

0.30

0.45

V

VCC(latch_hyst)

Defined hysteresis for hiccupping between two voltage levels in latch mode

5

−

0.55

−

V

ICC1

Start−up current (VCC(on) – 100 mV)

5

−

6

10

mA

ICC2

Internal IC consumption with VFB = 3.2 V, fSW = 65 kHz and CL = 0 nF

Internal IC consumption with VFB = 3.2 V, fSW = 100 kHz and CL = 0 nF

5

−

1.0

1.1

1.4

1.5

mA

ICC3

Internal IC consumption with VFB = 3.2 V, fSW = 65 kHz and CL = 1 nF

Internal IC consumption with VFB = 3.2 V, fSW = 100 kHz and CL = 1 nF

5

−

1.7

2.3

2.7

3.0

mA

ICC(no−load)

Internal consumption in skip mode – non switching, VFB = 0 V

5

−

300

−

mA

ICC(fault)

Internal consumption in fault mode – during going−down VCC cycle,

VFB = 4 V

5

−

370

−

mA

ICC(standby)

Internal IC consumption in skip mode for 65 kHz version (VCC = 14 V,

driving a typical 7−A/600−V MOSFET, includes opto current) – (Note 4)

5

−

420

−

mA

DRIVE OUTPUT

tr

Output voltage rise−time @ CL = 1 nF, 10−90% of output signal

6

−

40

−

ns

tf

Output voltage fall−time @ CL = 1 nF, 10−90% of output signal

6

−

30

−

ns

ROH

Source resistance, VCC = 12 V, IDRV = 100 mA

6

−

28

−

W

ROL

Sink resistance, VCC = 12 V, IDRV = 100 mA

6

−

7

−

W

Isource

Peak source current, VGS = 0 V

6

−

300

−

mA

Isink

Peak sink current, VGS = 12 V

6

−

500

−

mA

VDRV(low)

DRV pin level at VCC = VCC(min) + 100 mV with a 33 kW resistor to GND

6

8

−

V

VDRV(high)

DRV pin level at VCC = VOVP – 100 mV (DRV unloaded)

6

10

12

14

V

CURRENT COMPARATOR

Vlimit

Maximum internal current set point – TJ = 25°C – pin 3 grounded

Maximum internal current set point – TJ = −40°C to 125°C – pin 3 grounded

4

0.744

0.720

0.8

0.856

0.880

V

VCS(fold)

Internal voltage setpoint for frequency foldback trip point – 59% of Vlimit

4

−

475

−

mV

VCS(freeze)

Internal peak current setpoint freeze (

≈31% of Vlimit)

4

−

250

−

mV

tDEL

Propagation delay from CS pin to DRV output

4

−

50

80

ns

tLEB

Leading Edge Blanking Duration

4

−

300

−

ns

tSS

Internal soft−start duration activated upon startup or auto−recovery

4

−

4

−

ms

IOPPs

Set point decrease for pin 3 grounded

3

−

0

−

%

IOPPo

Set point decrease for pin 3 biased to −250 mV

3

−

31.3

−

%

IOOPv

Voltage set point for pin 3 biased to −250 mV, TJ = 25°C

Voltage set point for pin 3 biased to −250 mV, TJ = −40° to 125°C

3

0.51

0.50

0.55

0.60

0.62

V

INTERNAL OSCILLATOR

fOSC(nom)

Oscillation frequency (65 kHz version)

Oscillation frequency (100 kHz version)

−

61

92

65

100

71

108

kHz

Dmax

Maximum duty−ratio

−

76

80

84

%

fjitter

Frequency jittering in percentage of fOSC – jitter is kept even in foldback

mode

−

±5

−

%

4. Application parameter for information only.

5. 1−M

W resistor is connected from pin 4 to the ground for the measurement.

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