NIS5452 Series

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6

Figure 10. Common Thermal Shutdown

+ 5 V

GND

LOAD

Enable

11

8

NIS5452

VIN

VOUT

Enable/Fault

GND

5

10

3

4

2

1

dV /dt

RLIMIT

9

ILimit

7

+ 12 V

LOAD

11

3

NIS5232

VIN

VOUT

Enable/Fault

GND

10

1

8

9

7

6

dV /dt

2

ILimit

4

RLIMIT

APPLICATION INFORMATION

Basic Operation

This device is a self−protected, resettable, electronic fuse.

It contains circuits to monitor the input voltage, output

voltage, output current and die temperature.

On application of the input voltage, the device will apply

the input voltage to the load based on the restrictions of the

controlling circuits. The dv/dt of the output voltage will be

controlled by the internal dv/dt circuit. The output voltage

will slew from 0 V to the rated output voltage in 1.4 ms,

unless additional capacitance is added to the dv/dt pin.

The device will remain on as long as the temperature does

not exceed the 175

°C limit that is programmed into the chip.

The current limit circuit does not shut down the part but will

reduce the conductivity of the FET to maintain a constant

current at the internally set current limit level. The input

overvoltage clamp also does not shutdown the part, but will

that the input exceeds that level.

An internal charge pump provides bias for the gate voltage

of the internal n−channel power FET and also for the current

limit circuit. The remainder of the control circuitry operates

Application Information

It is recommended to connect an input decoupling

capacitor and an output filtering capacitor to the device to

attenuate the power supply noise and the possible voltage

spikes caused by inductive loads. The values of these

capacitors depend on the characteristics of the power supply

and the inductance observed by the device at its input and

output, however, minimum values of 1

mF for the input

capacitor and 22

mF for the output capacitor are

recommended for most applications.

Power Limit

limitations.

Current Limit

The current limit circuit uses a SENSEFET along with a

reference and amplifier to control the peak current in the

device. The SENSEFET allows for a small fraction of the

load current to be measured, which has the advantage of

reducing the losses in the sense resistor as well as increasing

the value and decreasing the power rating of the sense

resistor. Sense resistors are typically in the tens of ohms

range with power ratings of several milliwatts making them

very inexpensive chip resistors.

The current limit circuit has two limiting values, one for

overload events which are defined as the mode of operation

in which the gate is high and the FET is fully enhanced. The

short circuit mode of operation occurs when the device is

actively limiting the current and the gate is at an intermediate

level. For a more detailed description of this circuit please

refer to application note AND8140.

There are two methods of biasing the current limit circuit

for this device. They are shown in the two application

figures. Direct current sensing connects the sense resistor

between the current limit pin and the load. This method

includes the bond wire resistance in the current limit circuit.

This resistance has an impact on the current limit levels for

a given resistor and may vary slightly depending on the

impedance between the sense resistor and the source pins.

The on resistance of the device will be slightly lower in this

configuration since all five source pins are connected in

parallel and therefore, the effective bond wire resistance is

one fifth of the resistance for any given pin.

The other method is Kelvin sensing. This method uses one

of the source pins as the connection for the current sense

resistor. This connection senses the voltage on the die and

therefore any bond wire resistance and external impedance

on the board have no effect on the current limit levels. In this

configuration the on resistance is slightly increased relative

to the direct sense method since only four of the source pins

are used for power.