NCP3170BDR2G datasheet(7/26 Pages) ONSEMI

Part #	NCP3170BDR2G

Description	Synchronous PWM Switching Converter

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP3170

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7

TYPICAL PERFORMANCE CHARACTERISTICS

(Circuit from Figure 1, TA = 25°C, VIN = VEN = 12 V, VOUT = 3.3 V unless otherwise specified)

Figure 15. High Side MOSFET RDS(on) vs.

Temperature

Figure 16. Low Side MOSFET RDS(on) vs.

Temperature

TEMPERATURE (°C)

110

90

50

30

10

−10

−30

−50

60

70

80

90

100

110

130

110

90

70

30

10

−10

−30

−50

15

20

25

30

35

40

Figure 17. Transconductance vs. Temperature

Figure 18. Over Voltage Protection vs.

Temperature

TEMPERATURE (°C)

110

90

70

30

10

−10

−30

−50

180

185

190

195

200

205

210

215

110

90

70

30

10

−10

−30

−50

996.5

997.0

998.0

998.5

999.0

1000.0

1001.0

1001.5

70

130

Input Voltage = 12 V, 18 V

Input Voltage = 4.5 V

50

130

Input Voltage = 4.5 V

50

130

Input Voltage = 18 V

Input Voltage = 12 V

Input Voltage = 4.5 V

50

130

997.5

999.5

1000.5

Input Voltage = 18 V

Input Voltage = 12 V

Input Voltage = 4.5 V

Input Voltage = 12 V, 18 V

120

Figure 19. Input Under Voltage Protection vs.

Temperature

Input Under Voltage Protection Rising

TEMPERATURE (°C)

Input Under Voltage Protection Falling

110

90

70

30

10

−10

−30

−50

4.05

4.10

4.15

4.20

4.25

4.30

4.35

4.45

50

130

4.40

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