STD1NK60 datasheet(2/13 Pages) STMICROELECTRONICS

Part #	STD1NK60

Description	N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STD1NK60 - STD1NK60-1 - STQ1HNK60R

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ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX.

THERMAL DATA

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Value

Unit

STD1NK60

STD1NK60-1

STQ1HNK60R

VDS

Drain-source Voltage (VGS =0)

600

V

VDGR

Drain-gate Voltage (RGS =20kΩ)

600

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuous) at TC = 25°C

1.0

0.4

A

ID

Drain Current (continuous) at TC = 100°C

0.63

0.25

A

IDM ( )

Drain Current (pulsed)

4

1.6

A

PTOT

Total Dissipation at TC = 25°C

30

3

W

Derating Factor

0.24

0.025

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

3

V/ns

Tj

Tstg

Operating Junction Temperature

Storage Temperature

-55 to 150

°C

DPAK / IPAK

TO-92

Rthj-case

Thermal Resistance Junction-case Max

4.16

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

100

120

°C/W

Rthj-lead

Thermal Resistance Junction-lead Max

40

°C/W

Tl

Maximum Lead Temperature For Soldering

Purpose

275

260

°C

Symbol

Parameter

Max Value

Unit

DPAK / IPAK

TO-92

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

1A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C, ID =IAR,VDD =50 V)

25

mJ

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STD1NK60 Datasheet(PDF) 2 Page - STMicroelectronics

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