ZTL431xQ/ZTL432xQ

Document number: DS36916 Rev. 2 - 2

2 of 11

www.diodes.com

September 2016

© Diodes Incorporated

ZTL431xQ/ZTL432xQ

Parameter

Rating

Unit

20

V

150

mA

-50µA to +10mA

—

Operating Junction Temperature

-40 to +150

°C

Storage Temperature

-55 to +150

°C

ESD Susceptibility

HBM

Human Body Model

2

kV

MM

Machine Model

200

V

CDM

Charged Device Model

1

kV

Caution:

Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings

only; functional operation of the device at conditions between maximum recommended operating conditions and absolute maximum ratings is not

implied. Device reliability may be affected by exposure to absolute maximum rating conditions for extended periods of time.

(Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when handling

and transporting these devices.)

Package Thermal Data

Package

SOT23

380°C/W

260mW

SOT23F

138°C/W

720mW

SOT25

250°C/W

400mW

Symbol

Parameter

Min

Max

Unit

Cathode Voltage

20

V

Cathode Current

1

100

mA

Operating Ambient Temperature Range

-40

+125

°C

Symbol

Parameter

Conditions

Min

Typ

Max

Units

Reference Voltage

A - grade

2.475

2.5

2.525

V

B - grade

2.487

2.5

2.513

Deviation of Reference Voltage Over Full

Temperature Range

—

6

16

mV

—

14

34

—

14

34

Ratio of Change In Reference Voltage

To the Change In Cathode Voltage

—

-1.4

-2.7

mV/V

—

-1.0

-2.0

Reference Input Current

—

2

4

µA

—

0.8

1.2

µA

—

0.8

2.5

—

0.8

2.5

Minimum Cathode Current for Regulation

—

—

0.4

0.6

mA

Off State Current

—

—

0.1

0.5

µA

Dynamic Output Impedance

—

—

0.2

0.5

Ω