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ELM544539A-N Datasheet(PDF) 1 Page - ELM Electronics |
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ELM544539A-N Datasheet(HTML) 1 Page - ELM Electronics |
1 / 8 page 1 ELM544539A-N 8 - ELM544539A-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • N-channel Vds=30V, Id=5.0A, Rds(on)=36mΩ(Vgs=10V) Vds=30V, Id=4.7A, Rds(on)=46mΩ(Vgs=4.5V) • P-channel Vds=-30V, Id=-5.4A, Rds(on)=62mΩ(Vgs=-10V) Vds=-30V, Id=-4.2A, Rds(on)=90mΩ(Vgs=-4.5V) Parameter Symbol N-ch (Max.) P-ch (Max.) Unit Drain-source voltage Vds 30 -30 V Gate-source voltage Vgs ±20 ±20 V Continuous drain current Ta=25°C Id 5.4 -5.4 A Ta=70°C 4.0 -4.2 Pulsed drain current Idm 20 -30 A Power dissipation Tc=25°C Pd 2.8 2.8 W Tc=70°C 1.8 1.8 Junction and storage temperature range Tj,Tstg -55 to 150 -55 to 150 °C ■General Description ■Features ■Maximum Absolute Ratings ■Thermal Characteristics Parameter Symbol Device Typ. Max. Unit Maximum junction-to-ambient Steady-state Rθja N-ch 62.5 °C/W Maximum junction-to-ambient Steady-state Rθja P-ch 62.5 °C/W S2 G2 D2 S1 G1 D1 Pin No. Pin name 1 SOURCE1 2 GATE1 3 SOURCE2 4 GATE2 5 DRAIN2 6 DRAIN2 7 DRAIN1 8 DRAIN1 Complementary MOSFET ■Circuit • N-ch • P-ch ■Pin configuration SOP-8(TOP VIEW) 4 3 2 1 5 6 7 8 Ta=25°C. Unless otherwise noted. |
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