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DMT10H015LCG-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMT10H015LCG-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMT10H015LCG Document number: DS38362 Rev. 3 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMT10H015LCG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current, VGS = 10V (Note 6) Steady State TA = +25C TA = +70C ID 9.4 7.5 A Continuous Drain Current, VGS = 10V Steady State TC = +25C TC = +100C ID 34 21 A Maximum Continuous Body Diode Forward Current (Note 6) IS 1.6 A Pulsed Drain Current (10 s Pulse, Duty Cycle = 1%) IDM 54 A Avalanche Current, L = 3mH (Note 8) IAS 7.5 A Avalanche Energy, L = 3mH (Note 8) EAS 85 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 1 W Thermal Resistance, Junction to Ambient (Note 5) RJA 118 °C/W Total Power Dissipation (Note 6) PD 2.1 W Thermal Resistance, Junction to Ambient (Note 6) RJA 59 °C/W Thermal Resistance, Junction to Case RJC 4.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 80V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1.4 2 3.5 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) — 12.1 15 m Ω VGS = 10V, ID = 20A — 15 19.5 VGS = 6V, ID = 20A — 18.9 26 m Ω VGS = 4.5V, ID = 5A Diode Forward Voltage VSD — 0.9 1.3 V VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss — 1871 — pF VDS = 50V, VGS = 0V f = 1MHz Output Capacitance Coss — 261 — Reverse Transfer Capacitance Crss — 6.9 — Gate Resistance Rg — 0.75 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg — 33.3 — nC VDD = 50V, ID = 10A, VGS = 10V Gate-Source Charge Qgs — 6.9 — Gate-Drain Charge Qgd — 5.1 — Turn-On Delay Time tD(ON) — 6.5 — ns VDD = 50V, VGS = 10V, ID = 10A, Rg = 6Ω Turn-On Rise Time tR — 7 — Turn-Off Delay Time tD(OFF) — 19.7 — Turn-Off Fall Time tF — 8.1 — Reverse Recovery Time tRR — 37.9 — ns IF = 10A, di/dt = 100A/µs Reverse Recovery Charge QRR — 51.9 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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