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MC33399 Datasheet(PDF) 3 Page - Motorola, Inc |
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MC33399 Datasheet(HTML) 3 Page - Motorola, Inc |
3 / 9 page MC33399 Automotive “Local Interconnect Network” Physical Interface 3 Pull-up Current Source Is -50 -25 uA 1v <V(Tx) < 4v Enable Input Pin (Logic) Low Level Voltage Input Vil 1.5 V High Level Voltage Input Vih 3.5 V Input Threshold Hysteresis Vinhyst 50 400 mV Low Level Input Current (Vin 1V) Iil 10 20 uA High Level Input Current (Vin = 4V) Iih 20 40 uA Pull-down Current Idw 20 uA 1V<EN<4V LIN Bus Pin (Voltage Expressed versus Vsup Voltage) Low Level Voltage (Tx low, Iout =40mA) Vlin-low 0 1.4 V Dominant state High Level Voltage (Tx high, Iout = 10uA) Vlin-high VSUP-1V V Recessive state Pull up Resistor to Vsup (NOTE 1) Ipu 20 30 40 kohms Current Limitation (Tx low, LIN = Vsup) Ilim 50 200 mA Leakage Current to GND (NOTE 1) Ileak1 0 10 uA Recessive state, Vlin from Vsup-0.5V to +VBAT Leakage Current to GND, Vsup Disconnected Ileak2 -40 40 uA Vsup disconnected Vlin from -18 to +18V Excluding internal pull up source Leakage Current to GND, Vsup Disconnected VLin at -18V Ileak3 -600 uA Vsup disconnected Vlin from -18V Including internal pull up source Leakage Current to GND Vsup Disconnected VLin at +18V Ileak4 25 uA Vsup disconnected Vlin from +18V Including internal pull up source Lin Receiver Vil (Tx high, Rx low) Lin-vil 0 0.4VSUP Lin Receiver Vih (Tx high, Rx high) Lin-vih 0.6 VSUP VSUP LIN Receiver Threshold Vsup/2 V LIN Receiver Input Hysteresis LIN hyst 0.05VSUP 0.1 VSUP V Inhibit Output Pin High Level Voltage Vwuh VSUP-0.8 VSUP V Normal mode Leakage Current Ileak 0 5 uA Sleep mode 0<Vinh <Vsup WAKE Pin Typical Wake Up Threshold (EN = 0V), High to Low Transition, VSUP=7V to 18V. NOTE 2. Wuthreshl 0.44 VSUP V Typical Wake Up Threshold (EN = 0V), Low To High Transition, VSUP=7V to 18V. NOTE 2. Wuthreslh 0.57 VSUP V Wake Up Threshold Hysteresis Wuhyst 500 mV Wake Up Threshold, High to Low Transition at VSUP=12V Wuhl 3.6 6.5 V Wake Up Threshold, Low To High Transition at VSUP=12V Wulh 6.2 7.5 V Wake Input Current (V<14V) Win1 tbd 20 µA V<14V Wake Input Current (V>14V) Win2 100 µA V<27V NOTE: 1: A diode structure is inserted with the pull resistor to avoid parasitic current path from LIN to Vsup 2. When VSUP is greater than 18V, the wake up thresholds remain identical to the wake up thresholds at 18V ELECTRICAL CHARACTERISTICS ( VSUP = FROM 7 TO 18V, and T J FROM -40 TO 150°C UNLESS OTHERWISE NOTED) Description Symbol Characteristics Unit Conditions Min Typ Max Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com |
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