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MAC08MT1 Datasheet(PDF) 2 Page - ON Semiconductor |
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MAC08MT1 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 12 page MAC08BT1, MAC08MT1 http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 R θJA 156 °C/W Thermal Resistance, Junction to Tab Measured on MT2 Tab Adjacent to Epoxy R θJT 25 °C/W Maximum Device Temperature for Soldering Purposes (for 10 Seconds Maximum) TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 110°C IDRM, IRRM — — — — 10 200 µA µA ON CHARACTERISTICS Peak On–State Voltage(1) (IT = "1.1 A Peak) VTM — — 1.9 Volts Gate Trigger Current (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 Ω) IGT — — 10 mA Holding Current (Continuous dc) (VD = 12 Vdc, Gate Open, Initiating Current = "20 mA) IH — — 5.0 mA Gate Trigger Voltage (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 Ω) VGT — — 2.0 Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS On–State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110°C, Gate Source Resistance = 150 Ω, See Figure 10) (dv/dt)c 1.5 — — V/ µs Critical Rate–of–Rise of Off State Voltage (Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method) dv/dt 10 — — V/ µs (1) Pulse Test: Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. |
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