MAC08BT1, MAC08MT1

http://onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

PCB Mounted per Figure 1

R

θJA

156

°C/W

Thermal Resistance, Junction to Tab

Measured on MT2 Tab Adjacent to Epoxy

R

θJT

25

°C/W

Maximum Device Temperature for Soldering Purposes

(for 10 Seconds Maximum)

TL

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

TJ = 25°C

TJ = 110°C

IDRM,

IRRM

—

—

—

—

10

200

µA

µA

ON CHARACTERISTICS

Peak On–State Voltage(1)

(IT = "1.1 A Peak)

VTM

—

—

1.9

Volts

Gate Trigger Current (Continuous dc) All Quadrants

(VD = 12 Vdc, RL = 100 Ω)

IGT

—

—

10

mA

Holding Current (Continuous dc)

(VD = 12 Vdc, Gate Open, Initiating Current = "20 mA)

IH

—

—

5.0

mA

Gate Trigger Voltage (Continuous dc) All Quadrants

(VD = 12 Vdc, RL = 100 Ω)

VGT

—

—

2.0

Volts

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage

(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS

On–State Current Duration = 2.0 mS, VDRM = 200 V,

Gate Unenergized, TC = 110°C,

Gate Source Resistance = 150

Ω, See Figure 10)

(dv/dt)c

1.5

—

—

V/

µs

Critical Rate–of–Rise of Off State Voltage

(Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method)

dv/dt

10

—

—

V/

µs

(1) Pulse Test: Pulse Width

≤ 300 µsec, Duty Cycle ≤ 2%.