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TPS62110MRSAREP Datasheet(PDF) 4 Page - Texas Instruments |
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TPS62110MRSAREP Datasheet(HTML) 4 Page - Texas Instruments |
4 / 25 page ELECTRICAL CHARACTERISTICS TPS62110-EP TPS62111-EP TPS62112-EP SLVS630C – APRIL 2007 – REVISED MAY 2008 .............................................................................................................................................................. www.ti.com VI = 12 V, VO = 3.3 V, IO = 600 mA, EN = VI, TA = –55°C to 125°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VI Input voltage range (1) 3.1 17 V IO = 0 mA, SYNC = GND, VI = 7.2 V, 20 TA = 25°C (2) I(Q) Operating quiescent current µA IO = 0 mA, SYNC = GND, 23 29 VI = 17 V (2) EN = GND 1.5 5 I(SD) Shutdown current µA EN = GND, TA = 25°C, VI = 7.2 V 1.5 3 ENABLE VIH EN high-level input voltage 1.3 V VIL EN low-level input voltage 0.3 V EN trip-point hysteresis 170 mV IIKG EN input leakage current EN = GND or VI, VI = 17 V 0.01 0.2 µA I(EN) EN input current 0.6 V ≤ V(EN) ≤ 4 V 10 µA V(UVLO) Undervoltage lockout threshold Input voltage falling 2.8 3 3.1 V Undervoltage lockout hysteresis 250 mV POWER SWITCH VI ≥ 5.4 V, IO = 350 mA 165 250 rDS(ON) P-channel MOSFET on-resistance VI = 3.5 V, IO = 200 mA 340 m Ω VI = 3 V, IO = 100 mA 490 P-channel MOSFET leakage VDS = 17 V 0.1 1 µA current P-channel MOSFET current limit VI = 7.2 V, VO = 3.3 V 2400 mA VI ≥ 5.4 V, IO = 350 mA 145 200 rDS(ON) N-channel MOSFET on-resistance VI = 3.5 V, IO = 200 mA 170 m Ω VI = 3 V, IO = 100 mA 200 N-channel MOSFET leakage VDS = 17 V 0.1 3 µA current POWER GOOD OUTPUT, LBI, LBO V(PG) Power good trip voltage VO – 1.6% V VO ramping positive 50 Power good delay time µs VO ramping negative 200 VOL PG, LBO output low voltage V(FB) = 1.1 × VO nominal, IOL = 1 mA 0.3 V IOL PG, LBO sink current 1 mA PG, LBO output leakage current V(FB) = VO nominal 0.01 0.25 µA Minimum supply voltage for valid 3 V power good, LBI, LBO signal VLBI Low battery input trip voltage Input voltage falling 1.256 V ILBI LBI input leakage current 10 100 nA Low battery input trip-point 1.5 % accuracy VLBI,HYS Low battery input hysteresis 25 mV (1) Not Production tested (2) Device is not switching. 4 Submit Documentation Feedback Copyright © 2007–2008, Texas Instruments Incorporated Product Folder Link(s): TPS62110-EP TPS62111-EP TPS62112-EP |
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